Statistical PN junction leakage model with trap level fluctuation for Tref (refresh time) - oriented DRAM design

S. Kamohara; K. Kubota; M. Moniwa; K. Ohyu; A. Ogishima

Statistical PN junction leakage model with trap level fluctuation for Tref (refresh time) - oriented DRAM design

S. Kamohara, K. Kubota, M. Moniwa, K. Ohyu, A. Ogishima

Research output: Contribution to journal › Conference article › peer-review

Abstract

By analyzing the anomalous junction leakage of a single tail bit and introducing the trap level fluctuation model, we have successfully established a methodology for predicting the refresh time (Tref) of the current and next generations for the Tref-oriented DRAM design optimization.

Original language	English
Pages (from-to)	539-542
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
Publication status	Published - 1999 Dec 1
Event	1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA Duration: 1999 Dec 5 → 1999 Dec 8

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

@article{1db3054dc8b14ce48dbc57d4ecc67406,

title = "Statistical PN junction leakage model with trap level fluctuation for Tref (refresh time) - oriented DRAM design",

abstract = "By analyzing the anomalous junction leakage of a single tail bit and introducing the trap level fluctuation model, we have successfully established a methodology for predicting the refresh time (Tref) of the current and next generations for the Tref-oriented DRAM design optimization.",

author = "S. Kamohara and K. Kubota and M. Moniwa and K. Ohyu and A. Ogishima",

year = "1999",

month = dec,

day = "1",

language = "English",

pages = "539--542",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "1999 IEEE International Devices Meeting (IEDM) ; Conference date: 05-12-1999 Through 08-12-1999",

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TY - JOUR

T1 - Statistical PN junction leakage model with trap level fluctuation for Tref (refresh time) - oriented DRAM design

AU - Kamohara, S.

AU - Kubota, K.

AU - Moniwa, M.

AU - Ohyu, K.

AU - Ogishima, A.

PY - 1999/12/1

Y1 - 1999/12/1

N2 - By analyzing the anomalous junction leakage of a single tail bit and introducing the trap level fluctuation model, we have successfully established a methodology for predicting the refresh time (Tref) of the current and next generations for the Tref-oriented DRAM design optimization.

AB - By analyzing the anomalous junction leakage of a single tail bit and introducing the trap level fluctuation model, we have successfully established a methodology for predicting the refresh time (Tref) of the current and next generations for the Tref-oriented DRAM design optimization.

UR - http://www.scopus.com/inward/record.url?scp=0033332829&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033332829&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0033332829

SN - 0163-1918

SP - 539

EP - 542

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - 1999 IEEE International Devices Meeting (IEDM)

Y2 - 5 December 1999 through 8 December 1999

ER -

Statistical PN junction leakage model with trap level fluctuation for Tref (refresh time) - oriented DRAM design

Abstract

ASJC Scopus subject areas

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