## Abstract

Thermal-oxide stripped Si(001) surface topography is measured by scanning tunneling microscopy (STM) in UHV in order to analyze the statistical properties of the surface. A quantitative analysis implies that the autocovariance of the interface topography cannot be definitely fitted by a Gaussian or an exponential function. The fractal nature of the interface is studied in the sub-nanometer range for the first time and the roughness characteristic for a Gaussian random process might be observed. The rms fluctuation and correlation length of the surface are estimated to be 3.3 and 73 Å (Gaussian fit), respectively. The effects of UHV annealing on the statistical properties of the interface roughness are also studied.

Original language | English |
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Pages (from-to) | 39-44 |

Number of pages | 6 |

Journal | Applied Surface Science |

Volume | 60-61 |

Issue number | C |

DOIs | |

Publication status | Published - 1992 |

## ASJC Scopus subject areas

- Chemistry(all)
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films

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