Steep switching in trimmed-gate tunnel FET

Hidehiro Asai; Takahiro Mori; Takashi Matsukawa; Junichi Hattori; Kazuhiko Endo; Koichi Fukuda

doi:10.1063/1.5043570

Steep switching in trimmed-gate tunnel FET

Hidehiro Asai, Takahiro Mori, Takashi Matsukawa, Junichi Hattori, Kazuhiko Endo, Koichi Fukuda

IFS - Global Collaborative Research and Education Center for Integrated Flow Science (IFS-GCORE)

National Institute of Advanced Industrial Science and Technology

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We propose a tunnel field-effect transistor (TFET) having a trimmed gate (TG) structure, which considerably improves the subthreshold swing (SS). The TG structure truncates the needless long band-to-band tunneling (BTBT) paths to a "channel", which normally appear in a conventional TFET, and realize a sudden switching to the on-state arising from a short BTBT path. Our simulations demonstrate that the TG-TFET can achieve an extremely steep SS, less than 10 mV/decade, in the double-gated Si-channel configuration. The TG structure also improves the ratio I_ON/I_OFF to a value higher than that of ideal MOSFETs in the operation voltage range up to 0.35 V. The mechanism of steep switching is based on a simple modification of the gate electrostatic control; therefore, in addition to the demonstrated TFETs, the TG structure is universally applicable to many types of TFETs.

Original language	English
Article number	095103
Journal	AIP Advances
Volume	8
Issue number	9
DOIs	https://doi.org/10.1063/1.5043570
Publication status	Published - 2018 Sept 1

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AU - Asai, Hidehiro

AU - Mori, Takahiro

AU - Matsukawa, Takashi

AU - Hattori, Junichi

AU - Endo, Kazuhiko

AU - Fukuda, Koichi

PY - 2018/9/1

Y1 - 2018/9/1

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Steep switching in trimmed-gate tunnel FET

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