Step-bunched Bi-terminated Si(111) surfaces as a nanoscale orientation template for quasisingle crystalline epitaxial growth of thin film phase pentacene

Toshihiro Shimada; Manabu Ohtomo; Tadamasa Suzuki; Tetsuya Hasegawa; Keiji Ueno; Susumu Ikeda; Koichiro Saiki; Miho Sasaki; Katsuhiko Inaba

doi:10.1063/1.3040309

Step-bunched Bi-terminated Si(111) surfaces as a nanoscale orientation template for quasisingle crystalline epitaxial growth of thin film phase pentacene

Toshihiro Shimada, Manabu Ohtomo, Tadamasa Suzuki, Tetsuya Hasegawa, Keiji Ueno, Susumu Ikeda, Koichiro Saiki, Miho Sasaki, Katsuhiko Inaba

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

We developed a nanoscale orientation template for quasisingle crystalline epitaxial growth of thin film phase pentacene. By using α- √3×√3 Bi termination of surface dangling bonds on step-bunched vicinal surface of Si(111), thin film phase epitaxial pentacene was grown with the crystal axes aligned to the surface steps. Alignment occurred when the step height was higher than the molecular height. The mechanism of the alignment was examined by calculating the energy of the crystal edge.

Original language	English
Article number	223303
Journal	Applied Physics Letters
Volume	93
Issue number	22
DOIs	https://doi.org/10.1063/1.3040309
Publication status	Published - 2008
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3040309

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title = "Step-bunched Bi-terminated Si(111) surfaces as a nanoscale orientation template for quasisingle crystalline epitaxial growth of thin film phase pentacene",

abstract = "We developed a nanoscale orientation template for quasisingle crystalline epitaxial growth of thin film phase pentacene. By using α- √3×√3 Bi termination of surface dangling bonds on step-bunched vicinal surface of Si(111), thin film phase epitaxial pentacene was grown with the crystal axes aligned to the surface steps. Alignment occurred when the step height was higher than the molecular height. The mechanism of the alignment was examined by calculating the energy of the crystal edge.",

author = "Toshihiro Shimada and Manabu Ohtomo and Tadamasa Suzuki and Tetsuya Hasegawa and Keiji Ueno and Susumu Ikeda and Koichiro Saiki and Miho Sasaki and Katsuhiko Inaba",

note = "Funding Information: The present work was partly supported by KAKENHI (17260008, 19651048) from MEXT and the JST “Seeds Innovation Program”.",

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T1 - Step-bunched Bi-terminated Si(111) surfaces as a nanoscale orientation template for quasisingle crystalline epitaxial growth of thin film phase pentacene

AU - Shimada, Toshihiro

AU - Ohtomo, Manabu

AU - Suzuki, Tadamasa

AU - Hasegawa, Tetsuya

AU - Ueno, Keiji

AU - Ikeda, Susumu

AU - Saiki, Koichiro

AU - Sasaki, Miho

AU - Inaba, Katsuhiko

N1 - Funding Information: The present work was partly supported by KAKENHI (17260008, 19651048) from MEXT and the JST “Seeds Innovation Program”.

PY - 2008

Y1 - 2008

N2 - We developed a nanoscale orientation template for quasisingle crystalline epitaxial growth of thin film phase pentacene. By using α- √3×√3 Bi termination of surface dangling bonds on step-bunched vicinal surface of Si(111), thin film phase epitaxial pentacene was grown with the crystal axes aligned to the surface steps. Alignment occurred when the step height was higher than the molecular height. The mechanism of the alignment was examined by calculating the energy of the crystal edge.

AB - We developed a nanoscale orientation template for quasisingle crystalline epitaxial growth of thin film phase pentacene. By using α- √3×√3 Bi termination of surface dangling bonds on step-bunched vicinal surface of Si(111), thin film phase epitaxial pentacene was grown with the crystal axes aligned to the surface steps. Alignment occurred when the step height was higher than the molecular height. The mechanism of the alignment was examined by calculating the energy of the crystal edge.

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Step-bunched Bi-terminated Si(111) surfaces as a nanoscale orientation template for quasisingle crystalline epitaxial growth of thin film phase pentacene

Abstract

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