TY - JOUR
T1 - Sticking probability and adsorption process of NH3 on Si(100) surface
AU - Takaoka, T.
AU - Kusunoki, I.
N1 - Funding Information:
We would like to thank Dr J.R. Grover and Dr V. Kempter for the very careful revision of the manuscript. This work was financially supported in part by grants in aids for scientific research from the Ministry of Education, Science, and Culture of Japan and by CREST (Core Research for Evolutional Science and Technology) of Japan Science and Technology Corporation (JST).
PY - 1998/9/3
Y1 - 1998/9/3
N2 - The absolute sticking probability of NH3 molecules on Si(100) surface was measured using a NH3 molecular beam. Also taking into account the measured angular distribution of the scattered NH3 molecules, it is concluded that the adsorption of NH3 follows a trapping-mediated mechanism. From the dependence of the initial sticking probability on the sample temperature, the difference between the activation energies for desorption and chemisorption from a precursor state, (Edes-Ead), was estimated. The coverage dependence of the sticking probability, s(Θ), was also measured. From the sample temperature dependence of s(Θ), parameters for the migration of the NH3 precursor were derived using the Kisliuk model. The kinetics of the adsorption of NH3 on the Si(100) is discussed on the basis of this model.
AB - The absolute sticking probability of NH3 molecules on Si(100) surface was measured using a NH3 molecular beam. Also taking into account the measured angular distribution of the scattered NH3 molecules, it is concluded that the adsorption of NH3 follows a trapping-mediated mechanism. From the dependence of the initial sticking probability on the sample temperature, the difference between the activation energies for desorption and chemisorption from a precursor state, (Edes-Ead), was estimated. The coverage dependence of the sticking probability, s(Θ), was also measured. From the sample temperature dependence of s(Θ), parameters for the migration of the NH3 precursor were derived using the Kisliuk model. The kinetics of the adsorption of NH3 on the Si(100) is discussed on the basis of this model.
KW - Adsorption kinetics
KW - Ammonia
KW - Low index single crystal surfaces
KW - Molecule-solid scattering and diffraction - Inelastic
KW - Silicon
KW - Single crystal surfaces
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U2 - 10.1016/S0039-6028(98)00366-5
DO - 10.1016/S0039-6028(98)00366-5
M3 - Article
AN - SCOPUS:0032163131
SN - 0039-6028
VL - 412-413
SP - 30
EP - 41
JO - Surface Science
JF - Surface Science
ER -