Abstract
The atomic configuration of B atoms on the Si(001)-2 × 1 surface which are segregated on the top surface is investigated with scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) whose data are further analyzed by comparison with a cluster model calculation with a local density approximation method. Unoccupied state STM images show characteristic paired protrusions which are located on both sides of the Si dimer rows in a symmetrical manner. They can be observed only at a higher sample bias (> 1.4 V) and are enhanced at ∼2.0 V, which is further confirmed quantitatively by STS measurements. The cluster calculation shows that a model where a B atom is bridging two neighboring Si dimers in the same dimer row can reproduce the STM and STS observations.
| Original language | English |
|---|---|
| Pages (from-to) | 1188-1192 |
| Number of pages | 5 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 37 |
| Issue number | 3 SUPPL. B |
| DOIs | |
| Publication status | Published - 1998 Mar |
| Externally published | Yes |
Keywords
- B
- CITS
- DMol
- STM
- Segregation
- Si surface
- Steps
- Stripe steps
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)