We present here a scanning tunneling microscope study of the initial bonding structure and subsequent reaction mechanism of (Formula presented) with the Si(001) surface. Upon exposure of the sample at room temperature to 0.2 L of (Formula presented) (approximately 20% coverage) adsorption of the molecule on alternate dimer pairs is observed, leading to either a local (Formula presented) or (Formula presented) structure. In the filled-state image, a local minimum is observed in the center of the reacted dimer pairs, while the unreacted dimer pairs maintain the normal bean-shaped contour of the clean surface. The molecule forms an overlayer with either local (Formula presented) or (Formula presented) order, leading to a saturation coverage of 0.5 monolayers. Upon annealing the substrate at 775 K the surface becomes disordered and the steps are no longer visible. After further annealing at 875 K, SiC clusters are formed and the (Formula presented) structure is again seen between the clusters. For a starting coverage of 20%, annealing to higher temperatures around 1100 K leads to pinning of the step movement by the SiC clusters. For a starting coverage of 0.5 monolayer, annealing at 1100 K results in faceting of the surface. Further annealing at 1275 K creates anisotropic facets that are oriented along the [1¯10] direction with a typical aspect ratio of approximately 4 to 5. These facets act as nucleation sites for subsequent carbonization and SiC growth.
|Number of pages||8|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|Publication status||Published - 1997|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics