STM study of titanium silicide nanostructure growth on Si(1 1 1)-(sqrt(19) × sqrt(19)) substrate

M. Cegiel, M. Bazarnik, P. Biskupski, S. Winiarz, J. Gutek, A. Boś, S. Suto, S. Mielcarek, A. Wawro, R. Czajka

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11 Citations (Scopus)


We have performed an STM/STS study of titanium silicide nanostructures grown on Si(1 1 1)-(sqrt(19) × sqrt(19)) substrate by Ti evaporation and post-deposition annealing. The (sqrt(19) × sqrt(19)) reconstruction was induced by Ni doping. The reaction between the deposited material and the substrate at 220 K was radically different from that observed in the case of the standard Si(1 1 1)-(7 × 7) substrate, as evidenced by the different evaporation time necessary to obtain a comparable coverage of the surface. The annealing was accomplished by direct heating of a crystal sample (up to 520 K, 670 K and 970 K). Measurements showed that coalescence of Ti nanoislands began between 520 K and 670 K. Annealing above 900 K led to alloying of Ti, Ni and Si. As a consequence, Si(1 1 1)-(7 × 7) reconstruction occurred at the cost of Si(1 1 1)-(sqrt(19) × sqrt(19)).

Original languageEnglish
Pages (from-to)6948-6951
Number of pages4
JournalApplied Surface Science
Issue number21
Publication statusPublished - 2008 Aug 30


  • Nanostructures
  • Scanning tunneling microscopy
  • Scanning tunneling spectroscopy
  • Titanium silicide

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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