Abstract
We have performed an STM/STS study of titanium silicide nanostructures grown on Si(1 1 1)-(sqrt(19) × sqrt(19)) substrate by Ti evaporation and post-deposition annealing. The (sqrt(19) × sqrt(19)) reconstruction was induced by Ni doping. The reaction between the deposited material and the substrate at 220 K was radically different from that observed in the case of the standard Si(1 1 1)-(7 × 7) substrate, as evidenced by the different evaporation time necessary to obtain a comparable coverage of the surface. The annealing was accomplished by direct heating of a crystal sample (up to 520 K, 670 K and 970 K). Measurements showed that coalescence of Ti nanoislands began between 520 K and 670 K. Annealing above 900 K led to alloying of Ti, Ni and Si. As a consequence, Si(1 1 1)-(7 × 7) reconstruction occurred at the cost of Si(1 1 1)-(sqrt(19) × sqrt(19)).
| Original language | English |
|---|---|
| Pages (from-to) | 6948-6951 |
| Number of pages | 4 |
| Journal | Applied Surface Science |
| Volume | 254 |
| Issue number | 21 |
| DOIs | |
| Publication status | Published - 2008 Aug 30 |
Keywords
- Nanostructures
- Scanning tunneling microscopy
- Scanning tunneling spectroscopy
- Titanium silicide
ASJC Scopus subject areas
- Chemistry(all)
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films