TY - JOUR
T1 - Strain and Vibration Sensor Based on Inverse Magnetostriction of Amorphous Magnetostrictive Films
AU - Hashi, Shuichiro
AU - Sora, Daisuke
AU - Ishiyama, Kazushi
N1 - Funding Information:
This work was carried out in part at Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University. This work was supported in part by the Japan Society for the Promotion of Science through Grants-in-Aid for Scientific Research (B) 18H03270.
Publisher Copyright:
© 2010-2012 IEEE.
PY - 2019
Y1 - 2019
N2 - High-sensitivity strain and vibration sensors were fabricated based on the inverse magnetostriction effect (Villari effect) of amorphous FeSiB films. To control the anisotropy of FeSiB, we used the residual stress of the laminated structure after annealing, which depends on the mechanical properties of the substrate, a nonmagnetic molybdenum film, and the FeSiB film. The anisotropy of the rectangular FeSiB film was induced in the width axis for a cover glass substrate and in the longitudinal direction for a Si wafer substrate. The sensors detect strain and vibration based on the impedance change associated with a high-frequency permeability change in the FeSiB film. A gauge factor of 19 900 was obtained for the sensor element on the Si wafer. When an edge load of 2 g was attached to the free edge of a cantilever structure for the sensor element on the cover glass substrate, weak vibrations with an acceleration of 0.1 m/s2 in a frequency range of 10-100 Hz could be detected.
AB - High-sensitivity strain and vibration sensors were fabricated based on the inverse magnetostriction effect (Villari effect) of amorphous FeSiB films. To control the anisotropy of FeSiB, we used the residual stress of the laminated structure after annealing, which depends on the mechanical properties of the substrate, a nonmagnetic molybdenum film, and the FeSiB film. The anisotropy of the rectangular FeSiB film was induced in the width axis for a cover glass substrate and in the longitudinal direction for a Si wafer substrate. The sensors detect strain and vibration based on the impedance change associated with a high-frequency permeability change in the FeSiB film. A gauge factor of 19 900 was obtained for the sensor element on the Si wafer. When an edge load of 2 g was attached to the free edge of a cantilever structure for the sensor element on the cover glass substrate, weak vibrations with an acceleration of 0.1 m/s2 in a frequency range of 10-100 Hz could be detected.
KW - inverse magnetostrictive effect
KW - Magnetic instruments
KW - magnetostrictive film
KW - soft magnetic materials
KW - vibration sensor
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U2 - 10.1109/LMAG.2019.2957247
DO - 10.1109/LMAG.2019.2957247
M3 - Article
AN - SCOPUS:85076292876
SN - 1949-307X
VL - 10
JO - IEEE Magnetics Letters
JF - IEEE Magnetics Letters
M1 - 8920114
ER -