Strain dependence of dielectric properties and reliability of high-k thin films

K. Suzuki; K. Imasaki; Y. Ito; H. Miura

doi:10.1109/SISPAD.2009.5290250

Strain dependence of dielectric properties and reliability of high-k thin films

K. Suzuki, K. Imasaki, Y. Ito, H. Miura

Tohoku University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Citations (Scopus)

Abstract

The effect of strain on both electronic and structural characteristics of HfO₂ used for sub-50-nm semiconductor devices was analyzed by a quantum chemical molecular dynamics analysis. The band structure of HfO ₂ is strongly affected by strain in the film. Based on the change rate of band gap obtained from our simulations, the strain sensitivity of the relative permittivity of HfO₂ film is predicted to about 2.4%/1%-strain. The predicted strain sensitivity was validated quantitatively by measuring the change of the capacitance of MOS capacitors using a HfO ₂ gate dielectric film. It is very important, therefore, to minimize the mechanical strain in the dielectric film to assure the reliability of MOS transistor.

Original language	English
Title of host publication	SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices
DOIs	https://doi.org/10.1109/SISPAD.2009.5290250
Publication status	Published - 2009
Event	SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices - San Diego, CA, United States Duration: 2009 Sept 9 → 2009 Sept 11

Publication series

Name	International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Conference

Conference	SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices
Country/Territory	United States
City	San Diego, CA
Period	09/9/9 → 09/9/11

Keywords

Band gap
HfO2 film
Quantum chemical molecular dynamics
Reliability
Strain

Access to Document

10.1109/SISPAD.2009.5290250

Cite this

Suzuki, K., Imasaki, K., Ito, Y., & Miura, H. (2009). Strain dependence of dielectric properties and reliability of high-k thin films. In SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices Article 5290250 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). https://doi.org/10.1109/SISPAD.2009.5290250

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title = "Strain dependence of dielectric properties and reliability of high-k thin films",

abstract = "The effect of strain on both electronic and structural characteristics of HfO2 used for sub-50-nm semiconductor devices was analyzed by a quantum chemical molecular dynamics analysis. The band structure of HfO 2 is strongly affected by strain in the film. Based on the change rate of band gap obtained from our simulations, the strain sensitivity of the relative permittivity of HfO2 film is predicted to about 2.4%/1%-strain. The predicted strain sensitivity was validated quantitatively by measuring the change of the capacitance of MOS capacitors using a HfO 2 gate dielectric film. It is very important, therefore, to minimize the mechanical strain in the dielectric film to assure the reliability of MOS transistor.",

keywords = "Band gap, HfO2 film, Quantum chemical molecular dynamics, Reliability, Strain",

author = "K. Suzuki and K. Imasaki and Y. Ito and H. Miura",

note = "Funding Information: The authors gratefully acknowledge the Masdar Institute of Science and Technology (FSG 13WAMA1) for their continuous support.; SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices ; Conference date: 09-09-2009 Through 11-09-2009",

year = "2009",

doi = "10.1109/SISPAD.2009.5290250",

language = "English",

isbn = "9781424439492",

series = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD",

booktitle = "SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices",

}

Suzuki, K, Imasaki, K, Ito, Y & Miura, H 2009, Strain dependence of dielectric properties and reliability of high-k thin films. in SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices., 5290250, International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices, San Diego, CA, United States, 09/9/9. https://doi.org/10.1109/SISPAD.2009.5290250

Strain dependence of dielectric properties and reliability of high-k thin films. / Suzuki, K.; Imasaki, K.; Ito, Y. et al.
SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices. 2009. 5290250 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Strain dependence of dielectric properties and reliability of high-k thin films

AU - Suzuki, K.

AU - Imasaki, K.

AU - Ito, Y.

AU - Miura, H.

N1 - Funding Information: The authors gratefully acknowledge the Masdar Institute of Science and Technology (FSG 13WAMA1) for their continuous support.

PY - 2009

Y1 - 2009

N2 - The effect of strain on both electronic and structural characteristics of HfO2 used for sub-50-nm semiconductor devices was analyzed by a quantum chemical molecular dynamics analysis. The band structure of HfO 2 is strongly affected by strain in the film. Based on the change rate of band gap obtained from our simulations, the strain sensitivity of the relative permittivity of HfO2 film is predicted to about 2.4%/1%-strain. The predicted strain sensitivity was validated quantitatively by measuring the change of the capacitance of MOS capacitors using a HfO 2 gate dielectric film. It is very important, therefore, to minimize the mechanical strain in the dielectric film to assure the reliability of MOS transistor.

AB - The effect of strain on both electronic and structural characteristics of HfO2 used for sub-50-nm semiconductor devices was analyzed by a quantum chemical molecular dynamics analysis. The band structure of HfO 2 is strongly affected by strain in the film. Based on the change rate of band gap obtained from our simulations, the strain sensitivity of the relative permittivity of HfO2 film is predicted to about 2.4%/1%-strain. The predicted strain sensitivity was validated quantitatively by measuring the change of the capacitance of MOS capacitors using a HfO 2 gate dielectric film. It is very important, therefore, to minimize the mechanical strain in the dielectric film to assure the reliability of MOS transistor.

KW - Band gap

KW - HfO2 film

KW - Quantum chemical molecular dynamics

KW - Reliability

KW - Strain

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U2 - 10.1109/SISPAD.2009.5290250

DO - 10.1109/SISPAD.2009.5290250

M3 - Conference contribution

AN - SCOPUS:74349105229

SN - 9781424439492

T3 - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

BT - SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices

T2 - SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices

Y2 - 9 September 2009 through 11 September 2009

ER -

Strain dependence of dielectric properties and reliability of high-k thin films

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