Strain distribution of Si thin film grown on multicrystalline-SiGe with microscopic compositional distribution

Noritaka Usami; Tatsuya Takahashi; Kozo Fujiwara; Toru Ujihara; Gen Sazaki; Yoshihiro Murakami; Kazuo Nakajima

doi:10.1063/1.1520724

Strain distribution of Si thin film grown on multicrystalline-SiGe with microscopic compositional distribution

Noritaka Usami, Tatsuya Takahashi, Kozo Fujiwara, Toru Ujihara, Gen Sazaki, Yoshihiro Murakami, Kazuo Nakajima

IMR - Collaborative Research Center on Energy Materials

Tohoku University

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The growth and characterization of Si/multicrystalline-SiGe (mc-SiGe) heterostructure were reported. The strain distribution of Si thin film grown on mc-SiGe was investigated by Raman spectroscopy. It was found that on decreasing the average Ge composition of underlying SiGe, the spatial variation of the strain as well as strain relaxation was suppressed.

Original language	English
Pages (from-to)	7098-7101
Number of pages	4
Journal	Journal of Applied Physics
Volume	92
Issue number	12
DOIs	https://doi.org/10.1063/1.1520724
Publication status	Published - 2002 Dec 15

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abstract = "The growth and characterization of Si/multicrystalline-SiGe (mc-SiGe) heterostructure were reported. The strain distribution of Si thin film grown on mc-SiGe was investigated by Raman spectroscopy. It was found that on decreasing the average Ge composition of underlying SiGe, the spatial variation of the strain as well as strain relaxation was suppressed.",

author = "Noritaka Usami and Tatsuya Takahashi and Kozo Fujiwara and Toru Ujihara and Gen Sazaki and Yoshihiro Murakami and Kazuo Nakajima",

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AU - Usami, Noritaka

AU - Takahashi, Tatsuya

AU - Fujiwara, Kozo

AU - Ujihara, Toru

AU - Sazaki, Gen

AU - Murakami, Yoshihiro

AU - Nakajima, Kazuo

PY - 2002/12/15

Y1 - 2002/12/15

N2 - The growth and characterization of Si/multicrystalline-SiGe (mc-SiGe) heterostructure were reported. The strain distribution of Si thin film grown on mc-SiGe was investigated by Raman spectroscopy. It was found that on decreasing the average Ge composition of underlying SiGe, the spatial variation of the strain as well as strain relaxation was suppressed.

AB - The growth and characterization of Si/multicrystalline-SiGe (mc-SiGe) heterostructure were reported. The strain distribution of Si thin film grown on mc-SiGe was investigated by Raman spectroscopy. It was found that on decreasing the average Ge composition of underlying SiGe, the spatial variation of the strain as well as strain relaxation was suppressed.

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ER -

Strain distribution of Si thin film grown on multicrystalline-SiGe with microscopic compositional distribution

Abstract

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