Strain-induced leakage current in high-k gate oxides simulated with first-principles calculation

Hiroshi Moriya; Tomio Iwasaki; Hideo Miura

doi:10.1109/sispad.2005.201540

Strain-induced leakage current in high-k gate oxides simulated with first-principles calculation

Hiroshi Moriya, Tomio Iwasaki, Hideo Miura

ENG - Fracture and Reliability Research Institute

Hitachi, Ltd.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Citations (Scopus)

Abstract

We propose a new leakage mechanism that depends on the mechanical strain in high-k gate oxides, namely "high strain-induced leakage current". To explain this current, we analyzed the strain dependence of the leakage current of gate oxides by performing a first-principles calculation. The analysis showed that the leakage current drastically increases with tensile strain.

Original language	English
Title of host publication	2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	331-334
Number of pages	4
ISBN (Print)	4990276205, 9784990276201
DOIs	https://doi.org/10.1109/sispad.2005.201540
Publication status	Published - 2005
Event	2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005 - Tokyo, Japan Duration: 2005 Sept 1 → 2005 Sept 3

Publication series

Name	International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
Volume	2005

Conference

Conference	2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005
Country/Territory	Japan
City	Tokyo
Period	05/9/1 → 05/9/3

Access to Document

10.1109/sispad.2005.201540

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Moriya, H., Iwasaki, T., & Miura, H. (2005). Strain-induced leakage current in high-k gate oxides simulated with first-principles calculation. In 2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005 (pp. 331-334). Article 1562092 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD; Vol. 2005). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/sispad.2005.201540

Moriya, Hiroshi ; Iwasaki, Tomio ; Miura, Hideo. / Strain-induced leakage current in high-k gate oxides simulated with first-principles calculation. 2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005. Institute of Electrical and Electronics Engineers Inc., 2005. pp. 331-334 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

@inproceedings{5ac7f47a594f4bd69b1c9ed273038c1a,

title = "Strain-induced leakage current in high-k gate oxides simulated with first-principles calculation",

abstract = "We propose a new leakage mechanism that depends on the mechanical strain in high-k gate oxides, namely {"}high strain-induced leakage current{"}. To explain this current, we analyzed the strain dependence of the leakage current of gate oxides by performing a first-principles calculation. The analysis showed that the leakage current drastically increases with tensile strain.",

author = "Hiroshi Moriya and Tomio Iwasaki and Hideo Miura",

year = "2005",

doi = "10.1109/sispad.2005.201540",

language = "English",

isbn = "4990276205",

series = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "331--334",

booktitle = "2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005",

address = "United States",

note = "2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005 ; Conference date: 01-09-2005 Through 03-09-2005",

}

Moriya, H, Iwasaki, T & Miura, H 2005, Strain-induced leakage current in high-k gate oxides simulated with first-principles calculation. in 2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005., 1562092, International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, vol. 2005, Institute of Electrical and Electronics Engineers Inc., pp. 331-334, 2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005, Tokyo, Japan, 05/9/1. https://doi.org/10.1109/sispad.2005.201540

Strain-induced leakage current in high-k gate oxides simulated with first-principles calculation. / Moriya, Hiroshi; Iwasaki, Tomio; Miura, Hideo.
2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005. Institute of Electrical and Electronics Engineers Inc., 2005. p. 331-334 1562092 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Strain-induced leakage current in high-k gate oxides simulated with first-principles calculation

AU - Moriya, Hiroshi

AU - Iwasaki, Tomio

AU - Miura, Hideo

PY - 2005

Y1 - 2005

N2 - We propose a new leakage mechanism that depends on the mechanical strain in high-k gate oxides, namely "high strain-induced leakage current". To explain this current, we analyzed the strain dependence of the leakage current of gate oxides by performing a first-principles calculation. The analysis showed that the leakage current drastically increases with tensile strain.

AB - We propose a new leakage mechanism that depends on the mechanical strain in high-k gate oxides, namely "high strain-induced leakage current". To explain this current, we analyzed the strain dependence of the leakage current of gate oxides by performing a first-principles calculation. The analysis showed that the leakage current drastically increases with tensile strain.

UR - http://www.scopus.com/inward/record.url?scp=33845863397&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33845863397&partnerID=8YFLogxK

U2 - 10.1109/sispad.2005.201540

DO - 10.1109/sispad.2005.201540

M3 - Conference contribution

AN - SCOPUS:33845863397

SN - 4990276205

SN - 9784990276201

T3 - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

SP - 331

EP - 334

BT - 2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005

Y2 - 1 September 2005 through 3 September 2005

ER -

Moriya H, Iwasaki T, Miura H. Strain-induced leakage current in high-k gate oxides simulated with first-principles calculation. In 2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005. Institute of Electrical and Electronics Engineers Inc. 2005. p. 331-334. 1562092. (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). doi: 10.1109/sispad.2005.201540

Strain-induced leakage current in high-k gate oxides simulated with first-principles calculation

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