Surface segregation and strain relaxation processes in layer-by-layer growing InxGa1-xAs films on the GaAs(001) and GaAs(111)A substrates have been studied. While the lattice strain is almost relaxed by introducing misfit dislocations on the (111)A substrate, the in-plane lattice constant of the growing film on the (001) substrate hardly changes throughout the growth. We found that a significant amount of In atoms is segregated to the growing surface on the (001) substrate, which is induced by the lattice strain at the coherent (001) interface.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 2002 May 27|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)