Strain-induced surface segregation in In0.5Ga 0.5As/GaAs heteroepitaxy

Akihiro Ohtake; Masashi Ozeki; Masami Terauchi; Futami Sato; Michiyoshi Tanaka

doi:10.1063/1.1482792

Strain-induced surface segregation in In_0.5Ga _0.5As/GaAs heteroepitaxy

Akihiro Ohtake, Masashi Ozeki, Masami Terauchi, Futami Sato, Michiyoshi Tanaka

Division of Measurements

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Surface segregation and strain relaxation processes in layer-by-layer growing In_xGa_1-xAs films on the GaAs(001) and GaAs(111)A substrates have been studied. While the lattice strain is almost relaxed by introducing misfit dislocations on the (111)A substrate, the in-plane lattice constant of the growing film on the (001) substrate hardly changes throughout the growth. We found that a significant amount of In atoms is segregated to the growing surface on the (001) substrate, which is induced by the lattice strain at the coherent (001) interface.

Original language	English
Pages (from-to)	3931-3933
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	21
DOIs	https://doi.org/10.1063/1.1482792
Publication status	Published - 2002 May 27

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "Surface segregation and strain relaxation processes in layer-by-layer growing InxGa1-xAs films on the GaAs(001) and GaAs(111)A substrates have been studied. While the lattice strain is almost relaxed by introducing misfit dislocations on the (111)A substrate, the in-plane lattice constant of the growing film on the (001) substrate hardly changes throughout the growth. We found that a significant amount of In atoms is segregated to the growing surface on the (001) substrate, which is induced by the lattice strain at the coherent (001) interface.",

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T1 - Strain-induced surface segregation in In0.5Ga 0.5As/GaAs heteroepitaxy

AU - Ohtake, Akihiro

AU - Ozeki, Masashi

AU - Terauchi, Masami

AU - Sato, Futami

AU - Tanaka, Michiyoshi

PY - 2002/5/27

Y1 - 2002/5/27

N2 - Surface segregation and strain relaxation processes in layer-by-layer growing InxGa1-xAs films on the GaAs(001) and GaAs(111)A substrates have been studied. While the lattice strain is almost relaxed by introducing misfit dislocations on the (111)A substrate, the in-plane lattice constant of the growing film on the (001) substrate hardly changes throughout the growth. We found that a significant amount of In atoms is segregated to the growing surface on the (001) substrate, which is induced by the lattice strain at the coherent (001) interface.

AB - Surface segregation and strain relaxation processes in layer-by-layer growing InxGa1-xAs films on the GaAs(001) and GaAs(111)A substrates have been studied. While the lattice strain is almost relaxed by introducing misfit dislocations on the (111)A substrate, the in-plane lattice constant of the growing film on the (001) substrate hardly changes throughout the growth. We found that a significant amount of In atoms is segregated to the growing surface on the (001) substrate, which is induced by the lattice strain at the coherent (001) interface.

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Strain-induced surface segregation in In_0.5Ga _0.5As/GaAs heteroepitaxy

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