Strain-induced surface segregation in In0.5Ga 0.5As/GaAs heteroepitaxy

Akihiro Ohtake, Masashi Ozeki, Masami Terauchi, Futami Sato, Michiyoshi Tanaka

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


Surface segregation and strain relaxation processes in layer-by-layer growing InxGa1-xAs films on the GaAs(001) and GaAs(111)A substrates have been studied. While the lattice strain is almost relaxed by introducing misfit dislocations on the (111)A substrate, the in-plane lattice constant of the growing film on the (001) substrate hardly changes throughout the growth. We found that a significant amount of In atoms is segregated to the growing surface on the (001) substrate, which is induced by the lattice strain at the coherent (001) interface.

Original languageEnglish
Pages (from-to)3931-3933
Number of pages3
JournalApplied Physics Letters
Issue number21
Publication statusPublished - 2002 May 27

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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