Strain-mediated phase control and electrolyte-gating of electron-doped manganites

Ping Hua Xiang, Shutaro Asanuma, Hiroyuki Yamada, Isao H. Inoue, Hiroshi Sato, Hiroshi Akoh, Akihito Sawa, Kazunori Ueno, Hongtao Yuan, Hidekazu Shimotani, Masashi Kawasaki, Yoshihiro Iwasa

Research output: Contribution to journalArticlepeer-review

54 Citations (Scopus)


A prototype Mott transistor, the electric double layer transistor with a strained CaMnO 3 thin film, is fabricated. As predicted by the strain phase diagram of electron-doped manganite films, the device with the compressively strained CaMnO 3 exhibits an immense conductivity modulation upon applying a tiny gate voltage of 2 V.

Original languageEnglish
Pages (from-to)5822-5827
Number of pages6
JournalAdvanced Materials
Issue number48
Publication statusPublished - 2011 Dec 22


  • correlated electron oxides
  • field-effect transistors
  • metal-insulator transition
  • phase diagram


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