Abstract
A prototype Mott transistor, the electric double layer transistor with a strained CaMnO 3 thin film, is fabricated. As predicted by the strain phase diagram of electron-doped manganite films, the device with the compressively strained CaMnO 3 exhibits an immense conductivity modulation upon applying a tiny gate voltage of 2 V.
Original language | English |
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Pages (from-to) | 5822-5827 |
Number of pages | 6 |
Journal | Advanced Materials |
Volume | 23 |
Issue number | 48 |
DOIs | |
Publication status | Published - 2011 Dec 22 |
Keywords
- correlated electron oxides
- field-effect transistors
- metal-insulator transition
- phase diagram