Strain relaxation by stripe patterning in Si/Si1 - xGex/Si(100) heterostructures

Jangwoong Uhm; Masao Sakuraba; Junichi Murota

doi:10.1016/j.tsf.2005.08.396

Strain relaxation by stripe patterning in Si/Si_{1 - x}Ge_x/Si(100) heterostructures

Jangwoong Uhm, Masao Sakuraba, Junichi Murota

Information Devices Division

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

The relaxation of strain in Si/Si_{1 - x}Ge_x/Si(100) heterostructure by stripe patterning in [110] direction has been investigated using Raman scattering spectroscopy. It is found that the strain is relaxed by stripe patterning and that the degree of strain relaxation becomes larger for a narrower stripe, higher Ge fraction, and thinner capping Si layer. Even for the 5 μm-width line, the strain relaxation was observed at 0.4 μm inside of the stripe-patterned heterostructure. Therefore, it is suggested that strain relaxation in Si_{1 - x}Ge_x layer proceeds in the region from the stripe edge to the inner position of 0.4 μm away from the edge.

Original language	English
Pages (from-to)	239-242
Number of pages	4
Journal	Thin Solid Films
Volume	508
Issue number	1-2
DOIs	https://doi.org/10.1016/j.tsf.2005.08.396
Publication status	Published - 2006 Jun 5

Keywords

Heterostructures
Raman scattering
Si
SiGe
Strain relaxation

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2005.08.396

Cite this

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title = "Strain relaxation by stripe patterning in Si/Si1 - xGex/Si(100) heterostructures",

abstract = "The relaxation of strain in Si/Si1 - xGex/Si(100) heterostructure by stripe patterning in [110] direction has been investigated using Raman scattering spectroscopy. It is found that the strain is relaxed by stripe patterning and that the degree of strain relaxation becomes larger for a narrower stripe, higher Ge fraction, and thinner capping Si layer. Even for the 5 μm-width line, the strain relaxation was observed at 0.4 μm inside of the stripe-patterned heterostructure. Therefore, it is suggested that strain relaxation in Si1 - xGex layer proceeds in the region from the stripe edge to the inner position of 0.4 μm away from the edge.",

keywords = "Heterostructures, Raman scattering, Si, SiGe, Strain relaxation",

author = "Jangwoong Uhm and Masao Sakuraba and Junichi Murota",

note = "Funding Information: This study was partially supported by a Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology of Japan.",

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T1 - Strain relaxation by stripe patterning in Si/Si1 - xGex/Si(100) heterostructures

AU - Uhm, Jangwoong

AU - Sakuraba, Masao

AU - Murota, Junichi

N1 - Funding Information: This study was partially supported by a Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology of Japan.

PY - 2006/6/5

Y1 - 2006/6/5

N2 - The relaxation of strain in Si/Si1 - xGex/Si(100) heterostructure by stripe patterning in [110] direction has been investigated using Raman scattering spectroscopy. It is found that the strain is relaxed by stripe patterning and that the degree of strain relaxation becomes larger for a narrower stripe, higher Ge fraction, and thinner capping Si layer. Even for the 5 μm-width line, the strain relaxation was observed at 0.4 μm inside of the stripe-patterned heterostructure. Therefore, it is suggested that strain relaxation in Si1 - xGex layer proceeds in the region from the stripe edge to the inner position of 0.4 μm away from the edge.

AB - The relaxation of strain in Si/Si1 - xGex/Si(100) heterostructure by stripe patterning in [110] direction has been investigated using Raman scattering spectroscopy. It is found that the strain is relaxed by stripe patterning and that the degree of strain relaxation becomes larger for a narrower stripe, higher Ge fraction, and thinner capping Si layer. Even for the 5 μm-width line, the strain relaxation was observed at 0.4 μm inside of the stripe-patterned heterostructure. Therefore, it is suggested that strain relaxation in Si1 - xGex layer proceeds in the region from the stripe edge to the inner position of 0.4 μm away from the edge.

KW - Heterostructures

KW - Raman scattering

KW - Si

KW - SiGe

KW - Strain relaxation

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