Strain relaxation by stripe patterning in Si/Si1 - xGex/Si(100) heterostructures

Jangwoong Uhm, Masao Sakuraba, Junichi Murota

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19 Citations (Scopus)


The relaxation of strain in Si/Si1 - xGex/Si(100) heterostructure by stripe patterning in [110] direction has been investigated using Raman scattering spectroscopy. It is found that the strain is relaxed by stripe patterning and that the degree of strain relaxation becomes larger for a narrower stripe, higher Ge fraction, and thinner capping Si layer. Even for the 5 μm-width line, the strain relaxation was observed at 0.4 μm inside of the stripe-patterned heterostructure. Therefore, it is suggested that strain relaxation in Si1 - xGex layer proceeds in the region from the stripe edge to the inner position of 0.4 μm away from the edge.

Original languageEnglish
Pages (from-to)239-242
Number of pages4
JournalThin Solid Films
Issue number1-2
Publication statusPublished - 2006 Jun 5


  • Heterostructures
  • Raman scattering
  • Si
  • SiGe
  • Strain relaxation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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