Strain relaxation mechanism of InGaN thin film grown on m-GaN

Takashi Hanada, Taka aki Shimada, Shi Yang Ji, Kenji Hobo, Yuhuai Liu, Takashi Matsuoka

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)


InGaN films were grown on off-axis m -GaN substrates by metalorganic vapor phase epitaxy. Rocking curves of X-ray diffraction around c-axis revealed that Inx Ga1-xN films incline to ±a1 direction when the film thickness and In composition x exceed a certain critical condition. The strain relaxation mechanism by introducing a2 and -a3 misfit dislocations at the interface is deduced from the ±a1 inclination. The rocking curves are reproduced fairly well by the scattering-intensity calculations according to the atomic displacements caused by an array of the misfit dislocations, whose intervals are given by an asymmetric distribution function.

Original languageEnglish
Pages (from-to)444-446
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Issue number2
Publication statusPublished - 2011 Feb


  • InGaN
  • M-plane
  • Misfit dislocation
  • Strain relaxation

ASJC Scopus subject areas

  • Condensed Matter Physics


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