Strained silicon modulation field-effect transistor as a new sensor of terahertz radiation

Yahya Moubarak Meziani, Enrique Garcia, Enrique Velazquez, Enrique Diez, Amine El Moutaouakil, Taiichi Otsuji, K. Fobelets

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)

Abstract

In this paper, we report on room temperature detection of terahertz radiation from strained-Si modulation-doped field-effect transistors. A non-resonant signal was observed with a maximum around the threshold voltage. The signal was interpreted due to the plasma wave nonlinearities in the channel. The intensity of the signal increases for the higher applied drain-to-source current. We also observed a dependence of the signal on the polarization of the incoming radiations.

Original languageEnglish
Article number105006
JournalSemiconductor Science and Technology
Volume26
Issue number10
DOIs
Publication statusPublished - 2011 Oct 12

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