Strength evaluation technique for dislocation generation in Si substrate using ball indenter

Hiroyuki Ohta, Hideo Miura, Makoto Kitano

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


Since Si substrates do not contain any dislocations, it is important to estimate not only the critical stress of dislocation movement, but also the critical stress of dislocation generation, taking into account the fabrication process of semiconductor devices. Therefore, we propose a method for evaluating the critical strength for dislocation generation near the surface of Si substrate using a ball press test. An electromagnetic actuator was used to press a sapphire ball against a {100} oriented Si substrate at high temperature under vacuum. Several press tests were performed using a variety of load conditions. After each press test, the Si substrate was dipped into an etching solution containing fluoric acid, which allowed all dislocations to be observed. The stress conditions under the ball were estimated, thereby revealing the relationship between the stress and dislocation generation. Dislocations are located on the {111} planes in the 〈110〉 directions, and are generated around the center of the ball indenter, where the highest resolved shear stress is on the Si surface. The method appears to he useful not only for measuring the critical strength of dislocation generation, but also for observing the influence of surface treatment on the Si substrate.

Original languageEnglish
Pages (from-to)183-188
Number of pages6
JournalNihon Kikai Gakkai Ronbunshu, A Hen/Transactions of the Japan Society of Mechanical Engineers, Part A
Issue number605
Publication statusPublished - 1997


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