Stress Analysis in Silicon Substrates during Thermal Oxidation

Hiroyuki Ohta; Naoto Saito; Hideo Miura; Noriaki Okamoto

doi:10.1299/kikaia.60.805

Stress Analysis in Silicon Substrates during Thermal Oxidation

Hiroyuki Ohta, Naoto Saito, Hideo Miura, Noriaki Okamoto

ENG - Fracture and Reliability Research Institute

Research output: Contribution to journal › Article › peer-review

Abstract

The stress development mechanism during local thermal oxidation of silicon substrates is discussed based on the predicted results using a two-dimensional thermal oxidation simulation program, OXSIM 2 D, which the authors developed. Predicted stress changes during the oxidation agree well with the measured data obtained by means of microscopic Raman spectroscopy. There are three main factors which have important roles in stress development in the newly grown oxide film and the substrate. They are the volume expansion of the oxide film, the viscosity of the oxide film, and the bending of the silicon nitride film which is used for the oxidation barrier. These factors give rise to the complicated stress distribution and the stress change near the edge of the nitride film during thermal oxidation.

Original language	English
Pages (from-to)	805-810
Number of pages	6
Journal	Nihon Kikai Gakkai Ronbunshu, A Hen/Transactions of the Japan Society of Mechanical Engineers, Part A
Volume	60
Issue number	571
DOIs	https://doi.org/10.1299/kikaia.60.805
Publication status	Published - 1994

Keywords

LOCOS
Raman Spectroscopy
Structural Analysis
Thermal Oxidation
Viscoelasticity

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10.1299/kikaia.60.805

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@article{5cdad25755904b4aa7980c84c93f06a9,

title = "Stress Analysis in Silicon Substrates during Thermal Oxidation",

abstract = "The stress development mechanism during local thermal oxidation of silicon substrates is discussed based on the predicted results using a two-dimensional thermal oxidation simulation program, OXSIM 2 D, which the authors developed. Predicted stress changes during the oxidation agree well with the measured data obtained by means of microscopic Raman spectroscopy. There are three main factors which have important roles in stress development in the newly grown oxide film and the substrate. They are the volume expansion of the oxide film, the viscosity of the oxide film, and the bending of the silicon nitride film which is used for the oxidation barrier. These factors give rise to the complicated stress distribution and the stress change near the edge of the nitride film during thermal oxidation.",

keywords = "LOCOS, Raman Spectroscopy, Structural Analysis, Thermal Oxidation, Viscoelasticity",

author = "Hiroyuki Ohta and Naoto Saito and Hideo Miura and Noriaki Okamoto",

year = "1994",

doi = "10.1299/kikaia.60.805",

language = "English",

volume = "60",

pages = "805--810",

journal = "Nihon Kikai Gakkai Ronbunshu, A Hen/Transactions of the Japan Society of Mechanical Engineers, Part A",

issn = "0387-5008",

publisher = "Japan Society of Mechanical Engineers",

number = "571",

}

TY - JOUR

T1 - Stress Analysis in Silicon Substrates during Thermal Oxidation

AU - Ohta, Hiroyuki

AU - Saito, Naoto

AU - Miura, Hideo

AU - Okamoto, Noriaki

PY - 1994

Y1 - 1994

N2 - The stress development mechanism during local thermal oxidation of silicon substrates is discussed based on the predicted results using a two-dimensional thermal oxidation simulation program, OXSIM 2 D, which the authors developed. Predicted stress changes during the oxidation agree well with the measured data obtained by means of microscopic Raman spectroscopy. There are three main factors which have important roles in stress development in the newly grown oxide film and the substrate. They are the volume expansion of the oxide film, the viscosity of the oxide film, and the bending of the silicon nitride film which is used for the oxidation barrier. These factors give rise to the complicated stress distribution and the stress change near the edge of the nitride film during thermal oxidation.

AB - The stress development mechanism during local thermal oxidation of silicon substrates is discussed based on the predicted results using a two-dimensional thermal oxidation simulation program, OXSIM 2 D, which the authors developed. Predicted stress changes during the oxidation agree well with the measured data obtained by means of microscopic Raman spectroscopy. There are three main factors which have important roles in stress development in the newly grown oxide film and the substrate. They are the volume expansion of the oxide film, the viscosity of the oxide film, and the bending of the silicon nitride film which is used for the oxidation barrier. These factors give rise to the complicated stress distribution and the stress change near the edge of the nitride film during thermal oxidation.

KW - LOCOS

KW - Raman Spectroscopy

KW - Structural Analysis

KW - Thermal Oxidation

KW - Viscoelasticity

UR - http://www.scopus.com/inward/record.url?scp=0028392149&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028392149&partnerID=8YFLogxK

U2 - 10.1299/kikaia.60.805

DO - 10.1299/kikaia.60.805

M3 - Article

AN - SCOPUS:0028392149

SN - 0387-5008

VL - 60

SP - 805

EP - 810

JO - Nihon Kikai Gakkai Ronbunshu, A Hen/Transactions of the Japan Society of Mechanical Engineers, Part A

JF - Nihon Kikai Gakkai Ronbunshu, A Hen/Transactions of the Japan Society of Mechanical Engineers, Part A

IS - 571

ER -

Stress Analysis in Silicon Substrates during Thermal Oxidation

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Keywords

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