Stress control of AlN thin film sputter-deposited using ECR plasma

Engineering

• Thin Films 100%
• Plasma 100%
• Acoustics 66%
• Bias Voltage 66%
• Substrate Temperature 66%
• Compressive Stress 66%
• Substrate Bias 66%
• Losses 33%
• Properties 33%
• High Frequency 33%
• Energy Engineering 33%
• Fabrication 33%
• Lower Temperature 33%
• Zeros 33%
• Reduction 33%
• Research 33%
• Piezoelectric 33%
• Low Velocity 33%
• Filters 33%
• Moderate Temperature 33%
• Temperature Coefficient 33%
• Sensor 33%
• Full Width 33%
• Microelectromechanical System 33%
• Residual Stress 33%
• Mechanical Coupling 33%
• Gas Flow 33%

Material Science

• Thin Films 100%
• Aluminum Nitride 100%
• Temperature 57%
• Devices 14%
• X-Ray Diffraction 14%
• Velocity 14%
• Deterioration 14%
• Electromechanical Coupling 14%
• Piezoelectricity 14%