Stress control of silicon membrane for optical scanner with deformable mirror

Takashi Sasaki, Kazuhiro Hane

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


The top silicon layer of single-crystal silicon-on-insulator wafer is used to fabricate flexible membrane for a deformable mirror. Boron implantation was carried out to control the stress of the silicon membrane. In the case of 415um diameter lμm thick mirror, the deflection of 320nm was generated due to the bending moment at the rim. After the implantation, it decreased to 120nm deflection by the increased of tensile stress. Moreover, etching the membrane from the thickness of lμm to 480nm. The deflection decreased to 20 nm and the flat region of mirror increased to 300μm in diameter.

Original languageEnglish
Pages (from-to)138-141
Number of pages4
JournalIEEJ Transactions on Sensors and Micromachines
Issue number5
Publication statusPublished - 2009


  • Deformable mirror
  • Optical scanner
  • SOI wafer

ASJC Scopus subject areas

  • Mechanical Engineering
  • Electrical and Electronic Engineering


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