Stress-induced leakage current and random telegraph signal

Akinobu Teramoto, Yuki Kumagai, Kenichi Abe, Takafumi Fujisawa, Shunichi Watabe, Tomoyuki Suwa, Naoto Miyamoto, Shigetoshi Sugawa, Tadahiro Ohmi

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


Stress-induced leakage current (SILC) and random telegraph signal (RTS) in n -type metal-oxide-semiconductor field-effect-transistor (n -MOSFETs) caused by the Fowler-Nordheim tunneling stress are studied by using the author's newly developed test pattern. MOSFETs having large RTS increase can be induced by electrical stress in parallel with the inducing of SILC. Generation and recovery characteristics of SILC and RTS against the stress time and measurement temperature are very similar. However, the MOSFETs having large RTS are not related to ones having large anomalous SILC in this study. We consider that the traps that cause the RTS and anomalous SILC are the same, but their locations in Si O2 are different.

Original languageEnglish
Pages (from-to)435-438
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number1
Publication statusPublished - 2009


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