TY - JOUR
T1 - Stress induced leakage current generated by hot-hole injection
AU - Teramoto, Akinobu
AU - Park, Hyeonwoo
AU - Inatsuka, Takuya
AU - Kuroda, Rihito
AU - Sugawa, Shigetoshi
AU - Ohmi, Tadahiro
N1 - Funding Information:
We would like to thank Mr. Y. Kamata and Mr. K. Shibusawa for useful discussions and fabrication of the samples. This work was supported by JSPS Grant-in-Aid for Scientific Research (B), 24360129 .
PY - 2013
Y1 - 2013
N2 - Stress induced leakage current (SILC) of the gate dielectrics is one of the most critical problems in a scaling down of flash memories, and it is important to clarify the mechanism of SILC generation. In this paper SILC caused by substrate hot-hole injection is investigated. The SILC caused by hot-hole injection depends only on the number of injected holes and is independent of the oxide field, hole energy, and injected hole density. SILC is defined by the current at largest leakage path, and the largest leakage path increases with the increase of the stress at the early stress region and SILC is defined by average value of the large number of leakage spots, then the SILC increases linearly with the stress.
AB - Stress induced leakage current (SILC) of the gate dielectrics is one of the most critical problems in a scaling down of flash memories, and it is important to clarify the mechanism of SILC generation. In this paper SILC caused by substrate hot-hole injection is investigated. The SILC caused by hot-hole injection depends only on the number of injected holes and is independent of the oxide field, hole energy, and injected hole density. SILC is defined by the current at largest leakage path, and the largest leakage path increases with the increase of the stress at the early stress region and SILC is defined by average value of the large number of leakage spots, then the SILC increases linearly with the stress.
KW - Hole
KW - MOSFET
KW - Stress induced leakage current
KW - Tunnel oxide
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U2 - 10.1016/j.mee.2013.03.116
DO - 10.1016/j.mee.2013.03.116
M3 - Article
AN - SCOPUS:84876857902
SN - 0167-9317
VL - 109
SP - 298
EP - 301
JO - Microelectronic Engineering
JF - Microelectronic Engineering
ER -