Stress polarity dependence of the activation energies in the two time dependent dielectric breakdown measurements, the constant-current injection (Qbd testing) and the constant-voltage stressing (fbd testing) are investigated for gate oxides with the thickness ranging from 10 to 4 nm. A remarkable polarity dependence of the activation energies appears in the tbd testing when the oxide thickness decreases. This phenomenon is found to be due to a characteristic temperature dependence of the gate current density during the whole fbd testing period for thinner oxides, which is considered as a result from the temperature dependence of the electron trapping process during the stressing.
|Number of pages||3|
|Journal||IEEE Electron Device Letters|
|Publication status||Published - 1998 Nov|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering