Strongly Anisotropic Hopping Conduction in (Ga, Mn)As/GaAs

S. Katsumoto, A. Oiwa, Y. Iye, H. Ohno, F. Matsukura, A. Shen, Y. Sugawara

Research output: Contribution to journalArticlepeer-review

29 Citations (Scopus)


We report magnetotransport of (Ga, Mn)As below 1 K in the reentrant insulating phase. The external magnetic field drove the samples from the strongly insulating regime to the variable range hopping one. Below 1 K, the resistivity was strongly anisotropic (by about two orders of magnitude). The conduction along the highly resistive direction ([110]) was well described by variable range hopping in the soft Coulomb gap regime while that along the lower resistive direction ([110]) seemed to undergo an insulator-to-metal transition by the external magnetic field. The result may be a key to solve the problem of reentrant metal-to-insulator transition in (Ga, Mn)As with increasing Mn content.

Original languageEnglish
Pages (from-to)115-118
Number of pages4
JournalPhysica Status Solidi (B): Basic Research
Issue number1
Publication statusPublished - 1998 Jan


Dive into the research topics of 'Strongly Anisotropic Hopping Conduction in (Ga, Mn)As/GaAs'. Together they form a unique fingerprint.

Cite this