Structural analysis and transistor properties of hetero-molecular bilayers

Nobuya Hiroshiba; Ryoma Hayakawa; Matthieu Petit; Toyohiro Chikyow; Kiyoto Matsuishi; Yutaka Wakayama

doi:10.1016/j.tsf.2009.07.050

Structural analysis and transistor properties of hetero-molecular bilayers

Nobuya Hiroshiba, Ryoma Hayakawa, Matthieu Petit, Toyohiro Chikyow, Kiyoto Matsuishi, Yutaka Wakayama

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

We examined the film morphologies and transistor properties of hetero-molecular bilayer consisting of N, N'-dioctyl-3, 4, 9, 10-perylenedicarboximide (PTCDI-C₈) and quaterrylene. First, the structure and carrier conduction of PTCDI-C₈ films were studied, followed by an analysis of the carrier accumulation process in a PTCDI-C₈/quaterrylene hetero-bilayer transistor. Based on the displacement current measurement (DCM), we stress the potential of the hetero-bilayer for tuning carrier accumulation like carrier doping techniques in field-effect transistors.

Original language	English
Pages (from-to)	441-443
Number of pages	3
Journal	Thin Solid Films
Volume	518
Issue number	2
DOIs	https://doi.org/10.1016/j.tsf.2009.07.050
Publication status	Published - 2009 Nov 30

Keywords

Displacement current measurement
Hetero-interface
Organic Field Effect transistor

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2009.07.050

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abstract = "We examined the film morphologies and transistor properties of hetero-molecular bilayer consisting of N, N'-dioctyl-3, 4, 9, 10-perylenedicarboximide (PTCDI-C8) and quaterrylene. First, the structure and carrier conduction of PTCDI-C8 films were studied, followed by an analysis of the carrier accumulation process in a PTCDI-C8/quaterrylene hetero-bilayer transistor. Based on the displacement current measurement (DCM), we stress the potential of the hetero-bilayer for tuning carrier accumulation like carrier doping techniques in field-effect transistors.",

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T1 - Structural analysis and transistor properties of hetero-molecular bilayers

AU - Hiroshiba, Nobuya

AU - Hayakawa, Ryoma

AU - Petit, Matthieu

AU - Chikyow, Toyohiro

AU - Matsuishi, Kiyoto

AU - Wakayama, Yutaka

PY - 2009/11/30

Y1 - 2009/11/30

N2 - We examined the film morphologies and transistor properties of hetero-molecular bilayer consisting of N, N'-dioctyl-3, 4, 9, 10-perylenedicarboximide (PTCDI-C8) and quaterrylene. First, the structure and carrier conduction of PTCDI-C8 films were studied, followed by an analysis of the carrier accumulation process in a PTCDI-C8/quaterrylene hetero-bilayer transistor. Based on the displacement current measurement (DCM), we stress the potential of the hetero-bilayer for tuning carrier accumulation like carrier doping techniques in field-effect transistors.

AB - We examined the film morphologies and transistor properties of hetero-molecular bilayer consisting of N, N'-dioctyl-3, 4, 9, 10-perylenedicarboximide (PTCDI-C8) and quaterrylene. First, the structure and carrier conduction of PTCDI-C8 films were studied, followed by an analysis of the carrier accumulation process in a PTCDI-C8/quaterrylene hetero-bilayer transistor. Based on the displacement current measurement (DCM), we stress the potential of the hetero-bilayer for tuning carrier accumulation like carrier doping techniques in field-effect transistors.

KW - Displacement current measurement

KW - Hetero-interface

KW - Organic Field Effect transistor

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Structural analysis and transistor properties of hetero-molecular bilayers

Abstract

Keywords

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