The structures of InxGa1-xN single quantum wells (SQWs) on 3-μm-thick GaN layer for the ultraviolet, blue, and green light-emitting devices were investigated by coaxial-impact collision ion scattering spectroscopy (CAICISS). The possibility that CAICISS could analyze structural fluctuation of the ternary system like InxGa1-xN was demonstrated. It was found that In incorporated into InGaN SQWs occupied the substitutional site of Ga atom having Ga-face (+c) polarity.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 2000 Oct 16|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)