Structural analysis of InxGa1-xN single quantum wells by coaxial-impact collision ion scattering spectroscopy

M. Sumiya; S. Nakamura; S. F. Chichibu; K. Mizuno; M. Furusawa; M. Yoshimoto

doi:10.1063/1.1318933

Structural analysis of In_xGa_1-xN single quantum wells by coaxial-impact collision ion scattering spectroscopy

M. Sumiya, S. Nakamura, S. F. Chichibu, K. Mizuno, M. Furusawa, M. Yoshimoto

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

The structures of In_xGa_1-xN single quantum wells (SQWs) on 3-μm-thick GaN layer for the ultraviolet, blue, and green light-emitting devices were investigated by coaxial-impact collision ion scattering spectroscopy (CAICISS). The possibility that CAICISS could analyze structural fluctuation of the ternary system like In_xGa_1-xN was demonstrated. It was found that In incorporated into InGaN SQWs occupied the substitutional site of Ga atom having Ga-face (+c) polarity.

Original language	English
Pages (from-to)	2512-2514
Number of pages	3
Journal	Applied Physics Letters
Volume	77
Issue number	16
DOIs	https://doi.org/10.1063/1.1318933
Publication status	Published - 2000 Oct 16
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1318933

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title = "Structural analysis of InxGa1-xN single quantum wells by coaxial-impact collision ion scattering spectroscopy",

abstract = "The structures of InxGa1-xN single quantum wells (SQWs) on 3-μm-thick GaN layer for the ultraviolet, blue, and green light-emitting devices were investigated by coaxial-impact collision ion scattering spectroscopy (CAICISS). The possibility that CAICISS could analyze structural fluctuation of the ternary system like InxGa1-xN was demonstrated. It was found that In incorporated into InGaN SQWs occupied the substitutional site of Ga atom having Ga-face (+c) polarity.",

author = "M. Sumiya and S. Nakamura and Chichibu, {S. F.} and K. Mizuno and M. Furusawa and M. Yoshimoto",

year = "2000",

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doi = "10.1063/1.1318933",

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T1 - Structural analysis of InxGa1-xN single quantum wells by coaxial-impact collision ion scattering spectroscopy

AU - Sumiya, M.

AU - Nakamura, S.

AU - Chichibu, S. F.

AU - Mizuno, K.

AU - Furusawa, M.

AU - Yoshimoto, M.

PY - 2000/10/16

Y1 - 2000/10/16

N2 - The structures of InxGa1-xN single quantum wells (SQWs) on 3-μm-thick GaN layer for the ultraviolet, blue, and green light-emitting devices were investigated by coaxial-impact collision ion scattering spectroscopy (CAICISS). The possibility that CAICISS could analyze structural fluctuation of the ternary system like InxGa1-xN was demonstrated. It was found that In incorporated into InGaN SQWs occupied the substitutional site of Ga atom having Ga-face (+c) polarity.

AB - The structures of InxGa1-xN single quantum wells (SQWs) on 3-μm-thick GaN layer for the ultraviolet, blue, and green light-emitting devices were investigated by coaxial-impact collision ion scattering spectroscopy (CAICISS). The possibility that CAICISS could analyze structural fluctuation of the ternary system like InxGa1-xN was demonstrated. It was found that In incorporated into InGaN SQWs occupied the substitutional site of Ga atom having Ga-face (+c) polarity.

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DO - 10.1063/1.1318933

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SP - 2512

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

ER -

Structural analysis of In_xGa_1-xN single quantum wells by coaxial-impact collision ion scattering spectroscopy

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