TY - JOUR
T1 - Structural and chemical property of unsaturated cyclic-hydrocarbon molecules regularly chemisorbed on Si(0 0 1) surface
AU - Akagi, K.
AU - Tsuneyuki, S.
AU - Yamashita, Y.
AU - Hamaguchi, K.
AU - Yoshinobu, J.
N1 - Funding Information:
This work was supported by the grant-in-aid for Scientific Research on Priority Areas “Surface Chemistry of Condensed Molecules” from the Ministry of Education, Culture, Sports, Science and Technology. All the calculations were performed by TAPP (Tokyo Ab-initio Program Package) [21] with our own extension on Hitachi SR8000 system of the Super Computer Center at the Institute for Solid State Physics, the University of Tokyo.
PY - 2004/7/15
Y1 - 2004/7/15
N2 - The atomic configuration of C 6 H 8 molecules chemisorbed on Si(001) surface is elucidated by the first-principles molecular dynamics method. The characteristic pattern in the STM image at ~0.6ML coverage is found to be reproduced by considerable thermal fluctuation of the molecules including the change in the molecular conformation. The reaction path and growth mechanism of the chemisorption region is also discussed based on static calculation of the activation barrier.
AB - The atomic configuration of C 6 H 8 molecules chemisorbed on Si(001) surface is elucidated by the first-principles molecular dynamics method. The characteristic pattern in the STM image at ~0.6ML coverage is found to be reproduced by considerable thermal fluctuation of the molecules including the change in the molecular conformation. The reaction path and growth mechanism of the chemisorption region is also discussed based on static calculation of the activation barrier.
KW - Activation barrier
KW - C H
KW - Chemisorption
KW - First-principles calculation
KW - Molecular dynamics
KW - Si(0 0 1)
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U2 - 10.1016/j.apsusc.2004.05.054
DO - 10.1016/j.apsusc.2004.05.054
M3 - Conference article
AN - SCOPUS:3342961664
SN - 0169-4332
VL - 234
SP - 162
EP - 167
JO - Applied Surface Science
JF - Applied Surface Science
IS - 1-4
T2 - The Ninth International Conference on the Formation of Semicon
Y2 - 15 September 2003 through 19 September 2003
ER -