TY - GEN
T1 - Structural and electrical characteristics of Cu-Mn/SiOC/Si
AU - Chung, S. M.
AU - Koike, J.
AU - Otsuka, Y.
AU - Sako, H.
AU - Ishibashi, K.
AU - Kawasaki, N.
PY - 2010
Y1 - 2010
N2 - Structure and electrical characteristics were studied in Cu-Mn/SiOC/Si samples after annealing. A self-forming barrier layer was investigated for its chemical concentration and dielectric constants, depending on pre-annealing conditions of the SiOC substrate. Clear differences were observed by pre-annealing above 400 oC because of the moisture desorption.
AB - Structure and electrical characteristics were studied in Cu-Mn/SiOC/Si samples after annealing. A self-forming barrier layer was investigated for its chemical concentration and dielectric constants, depending on pre-annealing conditions of the SiOC substrate. Clear differences were observed by pre-annealing above 400 oC because of the moisture desorption.
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M3 - Conference contribution
AN - SCOPUS:79957650160
SN - 9781617822810
T3 - Advanced Metallization Conference (AMC)
SP - 242
BT - Advanced Metallization Conference 2010
T2 - Advanced Metallization Conference 2010
Y2 - 5 October 2010 through 7 October 2010
ER -