Structural and electrical properties of liquid phase epitaxially grown Y₁Ba₂Cu₃O_x films

Y¹Ba₂Cu₃O_x films, ranging in thickness from 0.9 to 10 μm, were grown on MgO(100) substrates by liquid phase epitaxy. These films were characterized structurally and electrically. From θ-2 θ and φ scan X-ray diffraction, and Rutherford backscattering spectrometry measurements, it was found that the films were c-axis oriented and had good in-plane alignment, showing that good epitaxial growth was achieved. The T_c,end values in a 20 mm long and 15 mm wide Y₁Ba₂Cu₃O_x. film exceeded 90 K. The T_c and resistivity values did not become degraded after patterning into a strip. Although J_c values decreased with increasing film thickness, even a 7 μm-thick film showed a J_c value of 9.3 × 10⁵ A/cm² at 77 K. These data are comparable to those reported for Y₁Ba₂Cu₃O_x films prepared on CeO₂/YSZ(100) by pulse laser deposition, and thought to be due to the c-axis orientation and good in-plane alignment of the liquid phase epitaxially grown thick films.