A diffusion barrier layer of a few nanometers in thickness is required for a Cu/SiO2 interconnect structure for advanced integrated circuits (ICs). This paper reports a new barrier material and process by chemical vapor deposition (CVD) of a Mn oxide layer using a bis(ethylcyclopentadienyl)manganese precursor. A good adhesion was obtained when the MnOx layer was deposited below 300 °C because of the small amount of carbon inclusion within the layer. The metal-oxide-semiconductor samples of Cu/MnO×/SiO2/p-Si showed a very low leakage current of less than 10−7 A/cm2 at 4 MV/cm and a negligible shift of the flat-band voltage after thermal annealing and bias temperature annealing. The obtained results indicated that the CVD-deposited MnO x is an excellent diffusion barrier layer for advanced ICs.
|Number of pages||8|
|Journal||IEEE Transactions on Device and Materials Reliability|
|Publication status||Published - 2011 Jun|
- Chemical vapor deposition (CVD)
- diffusion barrier
- manganese oxide
- metal-oxide-semiconductor (MOS) capacitors