Structural and Electronic Properties of a Mn Oxide Diffusion Barrier Layer Formed by Chemical Vapor Deposition

Vijay Kumar Dixit; Koji Neishi; Noboru Akao; Junichi Koike

doi:10.1109/TDMR.2011.2141671

Structural and Electronic Properties of a Mn Oxide Diffusion Barrier Layer Formed by Chemical Vapor Deposition

Vijay Kumar Dixit, Koji Neishi, Noboru Akao, Junichi Koike

Research output: Contribution to journal › Article › peer-review

37 Citations (Scopus)

Abstract

A diffusion barrier layer of a few nanometers in thickness is required for a Cu/SiO₂ interconnect structure for advanced integrated circuits (ICs). This paper reports a new barrier material and process by chemical vapor deposition (CVD) of a Mn oxide layer using a bis(ethylcyclopentadienyl)manganese precursor. A good adhesion was obtained when the MnO_x layer was deposited below 300 °C because of the small amount of carbon inclusion within the layer. The metal-oxide-semiconductor samples of Cu/MnO_×/SiO₂/p-Si showed a very low leakage current of less than 10⁻⁷ A/cm² at 4 MV/cm and a negligible shift of the flat-band voltage after thermal annealing and bias temperature annealing. The obtained results indicated that the CVD-deposited MnO _x is an excellent diffusion barrier layer for advanced ICs.

Original language	English
Pages (from-to)	295-302
Number of pages	8
Journal	IEEE Transactions on Device and Materials Reliability
Volume	11
Issue number	2
DOIs	https://doi.org/10.1109/TDMR.2011.2141671
Publication status	Published - 2011 Jun

Keywords

Chemical vapor deposition (CVD)
diffusion barrier
interconnect
manganese oxide
metal-oxide-semiconductor (MOS) capacitors

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10.1109/TDMR.2011.2141671

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title = "Structural and Electronic Properties of a Mn Oxide Diffusion Barrier Layer Formed by Chemical Vapor Deposition",

abstract = "A diffusion barrier layer of a few nanometers in thickness is required for a Cu/SiO2 interconnect structure for advanced integrated circuits (ICs). This paper reports a new barrier material and process by chemical vapor deposition (CVD) of a Mn oxide layer using a bis(ethylcyclopentadienyl)manganese precursor. A good adhesion was obtained when the MnOx layer was deposited below 300 °C because of the small amount of carbon inclusion within the layer. The metal-oxide-semiconductor samples of Cu/MnO×/SiO2/p-Si showed a very low leakage current of less than 10−7 A/cm2 at 4 MV/cm and a negligible shift of the flat-band voltage after thermal annealing and bias temperature annealing. The obtained results indicated that the CVD-deposited MnO x is an excellent diffusion barrier layer for advanced ICs.",

keywords = "Chemical vapor deposition (CVD), diffusion barrier, interconnect, manganese oxide, metal-oxide-semiconductor (MOS) capacitors",

author = "Dixit, {Vijay Kumar} and Koji Neishi and Noboru Akao and Junichi Koike",

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AU - Koike, Junichi

PY - 2011/6

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AB - A diffusion barrier layer of a few nanometers in thickness is required for a Cu/SiO2 interconnect structure for advanced integrated circuits (ICs). This paper reports a new barrier material and process by chemical vapor deposition (CVD) of a Mn oxide layer using a bis(ethylcyclopentadienyl)manganese precursor. A good adhesion was obtained when the MnOx layer was deposited below 300 °C because of the small amount of carbon inclusion within the layer. The metal-oxide-semiconductor samples of Cu/MnO×/SiO2/p-Si showed a very low leakage current of less than 10−7 A/cm2 at 4 MV/cm and a negligible shift of the flat-band voltage after thermal annealing and bias temperature annealing. The obtained results indicated that the CVD-deposited MnO x is an excellent diffusion barrier layer for advanced ICs.

KW - Chemical vapor deposition (CVD)

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KW - interconnect

KW - manganese oxide

KW - metal-oxide-semiconductor (MOS) capacitors

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Structural and Electronic Properties of a Mn Oxide Diffusion Barrier Layer Formed by Chemical Vapor Deposition

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