TY - JOUR
T1 - Structural and optical characterization of high-quality cubic GaN epilayers grown on GaAs and 3C-SiC substrates by gas-source MBE using RHEED in situ monitoring
AU - Ohumura, H.
AU - Balakrishnan, K.
AU - Feuillet, G.
AU - Ohta, K.
AU - Hamaguchi, H.
AU - Chichibu, S.
AU - Ishida, Y.
AU - Yoshida, S.
PY - 1997
Y1 - 1997
N2 - By monitoring RHEED reconstruction patterns during gas source molecular beam epitaxy growth, the optimization of the growth for cubic GaN was carried out successfully. Cubic GaN epilayer having a X-ray diffraction width of 16min and a low temperature photoluminescence emission width of 19meV was obtained on a 3C-SiC substrate by adjusting the effective III/V ratio in-situ during the growth, which can be inferred from the surface reconstruction transitions. It was found that the surface reconstructions of cubic GaN surfaces are good indices for the optimization of growth parameters.
AB - By monitoring RHEED reconstruction patterns during gas source molecular beam epitaxy growth, the optimization of the growth for cubic GaN was carried out successfully. Cubic GaN epilayer having a X-ray diffraction width of 16min and a low temperature photoluminescence emission width of 19meV was obtained on a 3C-SiC substrate by adjusting the effective III/V ratio in-situ during the growth, which can be inferred from the surface reconstruction transitions. It was found that the surface reconstructions of cubic GaN surfaces are good indices for the optimization of growth parameters.
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M3 - Conference article
AN - SCOPUS:0030677106
SN - 0272-9172
VL - 449
SP - 435
EP - 440
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
T2 - Proceedings of the 1996 MRS Fall Symposium
Y2 - 2 December 1996 through 5 December 1996
ER -