We have found that MgO deposited on c-Al2O3 substrates at high temperatures formed MgAl2O4 by inter-diffusion during MgO layer growth. The formation of spinel MgAl 2O4 has been confirmed by in-situ reflection high energy electron diffraction (RHEED) and grazing incident X-ray diffracition (GIXD). The critical temperature (Tc) for the formation of MgAl 2O4 was found to be around 700 °C above which MgAl2O4 is formed at the MgO/c-Al2O3 interface.
|Number of pages||4|
|Journal||Physica Status Solidi (C) Current Topics in Solid State Physics|
|Publication status||Published - 2007|
|Event||33rd International Symposium on Compound Semiconductors, ISCS-2006 - Vancouver, BC, Canada|
Duration: 2006 Aug 13 → 2006 Aug 17