Structural characterization of MgO/c-Al2O3 interfaces

T. Minegishi; T. Hanada; H. Suzuki; Z. Vashaei; D. C. Oh; K. Sumitani; O. Sakata; M. W. Cho; T. Yao

doi:10.1002/pssc.200674275

Structural characterization of MgO/c-Al₂O₃ interfaces

T. Minegishi, T. Hanada, H. Suzuki, Z. Vashaei, D. C. Oh, K. Sumitani, O. Sakata, M. W. Cho, T. Yao

IMR - Materials Design Division

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

We have found that MgO deposited on c-Al₂O₃ substrates at high temperatures formed MgAl₂O₄ by inter-diffusion during MgO layer growth. The formation of spinel MgAl ₂O₄ has been confirmed by in-situ reflection high energy electron diffraction (RHEED) and grazing incident X-ray diffracition (GIXD). The critical temperature (T_c) for the formation of MgAl ₂O₄ was found to be around 700 °C above which MgAl₂O₄ is formed at the MgO/c-Al₂O₃ interface.

Original language	English
Pages (from-to)	1715-1718
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	4
Issue number	5
DOIs	https://doi.org/10.1002/pssc.200674275
Publication status	Published - 2007
Event	33rd International Symposium on Compound Semiconductors, ISCS-2006 - Vancouver, BC, Canada Duration: 2006 Aug 13 → 2006 Aug 17

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@article{7c6357a99fed48abacaaf449dc7c9369,

title = "Structural characterization of MgO/c-Al2O3 interfaces",

abstract = "We have found that MgO deposited on c-Al2O3 substrates at high temperatures formed MgAl2O4 by inter-diffusion during MgO layer growth. The formation of spinel MgAl 2O4 has been confirmed by in-situ reflection high energy electron diffraction (RHEED) and grazing incident X-ray diffracition (GIXD). The critical temperature (Tc) for the formation of MgAl 2O4 was found to be around 700 °C above which MgAl2O4 is formed at the MgO/c-Al2O3 interface.",

author = "T. Minegishi and T. Hanada and H. Suzuki and Z. Vashaei and Oh, {D. C.} and K. Sumitani and O. Sakata and Cho, {M. W.} and T. Yao",

year = "2007",

doi = "10.1002/pssc.200674275",

language = "English",

volume = "4",

pages = "1715--1718",

journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

issn = "1862-6351",

publisher = "Wiley-VCH Verlag",

number = "5",

note = "33rd International Symposium on Compound Semiconductors, ISCS-2006 ; Conference date: 13-08-2006 Through 17-08-2006",

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TY - JOUR

T1 - Structural characterization of MgO/c-Al2O3 interfaces

AU - Minegishi, T.

AU - Hanada, T.

AU - Suzuki, H.

AU - Vashaei, Z.

AU - Oh, D. C.

AU - Sumitani, K.

AU - Sakata, O.

AU - Cho, M. W.

AU - Yao, T.

PY - 2007

Y1 - 2007

N2 - We have found that MgO deposited on c-Al2O3 substrates at high temperatures formed MgAl2O4 by inter-diffusion during MgO layer growth. The formation of spinel MgAl 2O4 has been confirmed by in-situ reflection high energy electron diffraction (RHEED) and grazing incident X-ray diffracition (GIXD). The critical temperature (Tc) for the formation of MgAl 2O4 was found to be around 700 °C above which MgAl2O4 is formed at the MgO/c-Al2O3 interface.

AB - We have found that MgO deposited on c-Al2O3 substrates at high temperatures formed MgAl2O4 by inter-diffusion during MgO layer growth. The formation of spinel MgAl 2O4 has been confirmed by in-situ reflection high energy electron diffraction (RHEED) and grazing incident X-ray diffracition (GIXD). The critical temperature (Tc) for the formation of MgAl 2O4 was found to be around 700 °C above which MgAl2O4 is formed at the MgO/c-Al2O3 interface.

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U2 - 10.1002/pssc.200674275

DO - 10.1002/pssc.200674275

M3 - Conference article

AN - SCOPUS:49549114887

SN - 1862-6351

VL - 4

SP - 1715

EP - 1718

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

IS - 5

T2 - 33rd International Symposium on Compound Semiconductors, ISCS-2006

Y2 - 13 August 2006 through 17 August 2006

ER -

Structural characterization of MgO/c-Al₂O₃ interfaces

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