Structural defect-related photoluminescence in GaN

L. Chen, B. J. Skromme, M. K. Mikhov, H. Yamane, M. Aoki, F. J. DiSalvo, B. Wagner, R. F. Davis, P. A. Grudowski, R. D. Dupuis

Research output: Contribution to journalConference articlepeer-review


Broad, low temperature photoluminescence (PL) peaks near 3.4-3.42 eV in GaN have previously been associated with basal-plane stacking faults. Recently, we observed unusually sharp and highly structured PL peaks in this region in high quality bulk GaN grown from a Na/Ga flux, some of which display characteristic shifts and narrowing as a function of excitation power. Here, we study these peaks as a function of excitation intensity and crystal polarity, and compare them to those observed in GaN grown on off-axis SiC or sapphire (0001) substrates by metalorganic chemical vapor deposition (MOCVD). In the off-axis material on either substrate, similar peaks are observed to those in the bulk samples. In addition, a low energy peak near 3.21 eV is observed, which does not occur in the bulk material.

Original languageEnglish
Pages (from-to)637-642
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Publication statusPublished - 2003
EventGaN and Related Alloys - 2003 - Boston, MA, United States
Duration: 2003 Dec 12003 Dec 5


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