SrIrO3 thin films were prepared by laser ablating a monoclinic SrIrO3 target at the substrate temperature of 973 K with oxygen pressure ranging from 4 to 67 Pa. The glancing angle incidence X-ray diffraction (GIXRD) and micro-X-ray photoelectron spectroscopy (XPS) results suggested that SrIrO3 thin films were obtained. The resistivities and transmittance of SrIrO3 thin films at room temperature were in the range from 0.93 to 4.8 × 10-3 Ωm and from 0.20 to 0.30 in the wavelength range of 600-800 nm, respectively. The electrical property of SrIrO3 thin films changed from semiconductive to metallic with increasing the ablation oxygen pressure.
- Atomic force microscopy
- Glancing angle incidence X-ray diffraction
- SrIrO films
- X-ray photoelectron spectra