Structural elements of ultrashallow thermal donors formed in silicon crystals

Akito Hara, Teruyoshi Awano, Yutaka Ohno, Ichiro Yonenaga

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1 Citation (Scopus)


It has been reported by one of the authors (A.H.) of the present study that ultrashallow thermal donors (USTDs) with a hydrogen-like electronic structure are formed in C- and N-doped O-rich Si crystals at approximately 450-600 °C. In this paper, it is reported that there are two types of USTDs: USTDs comprising C, H, and O [D(C,H,O)s] and USTDs comprising C, N, and O [D(C,N,O)s]. The thermal stability of these two types of donors was different; D(C,N,O)s were stable at 600 °C, while D(C,H,O)s were not stable at approximately 600 °C.

Original languageEnglish
Pages (from-to)502031-502033
Number of pages3
JournalJapanese Journal of Applied Physics
Issue number5 PART 1
Publication statusPublished - 2010 May


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