TY - GEN
T1 - Structural investigation of cubic-phase InN on GaAs (001) grown by MBE under In- And N-rich growth conditions
AU - Kuntharin, S.
AU - Sanorpim, S.
AU - Nakamura, T.
AU - Katayama, Ryuji
AU - Onabe, K.
PY - 2008/1/1
Y1 - 2008/1/1
N2 - We have investigated effect of the In- and N-rich growth conditions on the structural modification of cubic-phase InN (c-InN) films grown on GaAs (001) substrates by rf-plasmaassisted molecular beam epitaxy (RF-MBE). High resolution x-ray diffraction (HRXRD) and Raman scattering measurements were performed to examine the hexagonal phase generation in the c-InN grown films. It is evident that higher crystal quality c-InN films with higher cubic phase purity (∼82%) were achieved under the In-rich growth condition. On the other hand, for the N-rich growth condition, the c-InN films exhibited higher incorporation of hexagonal phase, which is generated in the cubic phase through the incidental stacking faults on the c-InN (111) planes. Our results demonstrate that the In-rich growth condition plays a critical role in the growth of high quality c-InN films with higher cubic phase purity.
AB - We have investigated effect of the In- and N-rich growth conditions on the structural modification of cubic-phase InN (c-InN) films grown on GaAs (001) substrates by rf-plasmaassisted molecular beam epitaxy (RF-MBE). High resolution x-ray diffraction (HRXRD) and Raman scattering measurements were performed to examine the hexagonal phase generation in the c-InN grown films. It is evident that higher crystal quality c-InN films with higher cubic phase purity (∼82%) were achieved under the In-rich growth condition. On the other hand, for the N-rich growth condition, the c-InN films exhibited higher incorporation of hexagonal phase, which is generated in the cubic phase through the incidental stacking faults on the c-InN (111) planes. Our results demonstrate that the In-rich growth condition plays a critical role in the growth of high quality c-InN films with higher cubic phase purity.
KW - High resolution x-ray diffraction
KW - In-rich growth condition
KW - Raman scattering
KW - c-InN
UR - http://www.scopus.com/inward/record.url?scp=45749091024&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=45749091024&partnerID=8YFLogxK
U2 - 10.4028/0-87849-471-5.215
DO - 10.4028/0-87849-471-5.215
M3 - Conference contribution
AN - SCOPUS:45749091024
SN - 0878494715
SN - 9780878494712
T3 - Advanced Materials Research
SP - 215
EP - 217
BT - Semiconductor Photonics
PB - Trans Tech Publications
T2 - International Conference on Materials for Advanced Technologies, ICMAT 2007
Y2 - 1 July 2007 through 6 July 2007
ER -