Structural investigation of Ge3Sb2Te6, an intermetallic compound in the GeTe-Sb2Te3 homologous series

Toshiyuki Matsunaga; Rie Kojima; Noboru Yamada; Kouichi Kifune; Yoshiki Kubota; Masaki Takata

doi:10.1063/1.2728030

Structural investigation of Ge₃Sb₂Te₆, an intermetallic compound in the GeTe-Sb₂Te₃ homologous series

Toshiyuki Matsunaga, Rie Kojima, Noboru Yamada, Kouichi Kifune, Yoshiki Kubota, Masaki Takata

Research output: Contribution to journal › Article › peer-review

40 Citations (Scopus)

Abstract

Ge₃Sb₂Te₆ was analyzed in detail using an x-ray diffraction method. The crystal of this material in the space group R3̄m is characterized as a 33-layered cubic close-packed stacking structure. Te atoms fully occupy their specific layers, whereas Ge and Sb atoms are located in other layers thus causing partial atomic disordering. Te and Ge/Sb layers are laminated alternately 11 times to form a NaCl block. Electron density distributions in the crystal were obtained using the maximum entropy method and band calculation, which showed very good agreement with each other. Ge3Sb2Te6 is a compound semiconductor with a very narrow band gap.

Original language	English
Article number	161919
Journal	Applied Physics Letters
Volume	90
Issue number	16
DOIs	https://doi.org/10.1063/1.2728030
Publication status	Published - 2007
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2728030

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title = "Structural investigation of Ge3Sb2Te6, an intermetallic compound in the GeTe-Sb2Te3 homologous series",

abstract = "Ge3Sb2Te6 was analyzed in detail using an x-ray diffraction method. The crystal of this material in the space group R{\=3}m is characterized as a 33-layered cubic close-packed stacking structure. Te atoms fully occupy their specific layers, whereas Ge and Sb atoms are located in other layers thus causing partial atomic disordering. Te and Ge/Sb layers are laminated alternately 11 times to form a NaCl block. Electron density distributions in the crystal were obtained using the maximum entropy method and band calculation, which showed very good agreement with each other. Ge3Sb2Te6 is a compound semiconductor with a very narrow band gap.",

author = "Toshiyuki Matsunaga and Rie Kojima and Noboru Yamada and Kouichi Kifune and Yoshiki Kubota and Masaki Takata",

year = "2007",

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T1 - Structural investigation of Ge3Sb2Te6, an intermetallic compound in the GeTe-Sb2Te3 homologous series

AU - Matsunaga, Toshiyuki

AU - Kojima, Rie

AU - Yamada, Noboru

AU - Kifune, Kouichi

AU - Kubota, Yoshiki

AU - Takata, Masaki

PY - 2007

Y1 - 2007

N2 - Ge3Sb2Te6 was analyzed in detail using an x-ray diffraction method. The crystal of this material in the space group R3̄m is characterized as a 33-layered cubic close-packed stacking structure. Te atoms fully occupy their specific layers, whereas Ge and Sb atoms are located in other layers thus causing partial atomic disordering. Te and Ge/Sb layers are laminated alternately 11 times to form a NaCl block. Electron density distributions in the crystal were obtained using the maximum entropy method and band calculation, which showed very good agreement with each other. Ge3Sb2Te6 is a compound semiconductor with a very narrow band gap.

AB - Ge3Sb2Te6 was analyzed in detail using an x-ray diffraction method. The crystal of this material in the space group R3̄m is characterized as a 33-layered cubic close-packed stacking structure. Te atoms fully occupy their specific layers, whereas Ge and Sb atoms are located in other layers thus causing partial atomic disordering. Te and Ge/Sb layers are laminated alternately 11 times to form a NaCl block. Electron density distributions in the crystal were obtained using the maximum entropy method and band calculation, which showed very good agreement with each other. Ge3Sb2Te6 is a compound semiconductor with a very narrow band gap.

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ER -

Structural investigation of Ge₃Sb₂Te₆, an intermetallic compound in the GeTe-Sb₂Te₃ homologous series

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