Structural investigation of nitrided c -sapphire substrate by grazing incidence x-ray diffraction and transmission electron microscopy

Hyo Jong Lee; Jun Seok Ha; S. W. Lee; H. J. Lee; H. Goto; S. H. Lee; M. W. Cho; T. Yao; T. Minegishi; T. Hanada; Soon Ku Hong; Osami Sakata; Jae Wook Lee; Jeong Yong Lee

doi:10.1063/1.2815919

Structural investigation of nitrided c -sapphire substrate by grazing incidence x-ray diffraction and transmission electron microscopy

Hyo Jong Lee, Jun Seok Ha, S. W. Lee, H. J. Lee, H. Goto, S. H. Lee, M. W. Cho, T. Yao, T. Minegishi, T. Hanada, Soon Ku Hong, Osami Sakata, Jae Wook Lee, Jeong Yong Lee

IMR - Materials Design Division

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

A grazing incidence x-ray diffraction with a synchrotron radiation and a cross-sectional high-resolution transmission electron microscopy were performed on the sapphire surface nitrided at 1080 °C for 30 min. The thickness of the nitrided layer was about 2 nm. It was found out that the wurtzite, zinc-blende, and 30° rotated zinc-blende aluminum nitrides were formed on the sapphire surface. The 30° rotated zb-AlN formed the incoherent interface and has higher activation energy of formation, while the nonrotated zb-AlN formed the coherent interface.

Original language	English
Article number	202116
Journal	Applied Physics Letters
Volume	91
Issue number	20
DOIs	https://doi.org/10.1063/1.2815919
Publication status	Published - 2007

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Lee, H. J., Ha, J. S., Lee, S. W., Lee, H. J., Goto, H., Lee, S. H., Cho, M. W., Yao, T., Minegishi, T., Hanada, T., Hong, S. K., Sakata, O., Lee, J. W., & Lee, J. Y. (2007). Structural investigation of nitrided c -sapphire substrate by grazing incidence x-ray diffraction and transmission electron microscopy. Applied Physics Letters, 91(20), Article 202116. https://doi.org/10.1063/1.2815919

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title = "Structural investigation of nitrided c -sapphire substrate by grazing incidence x-ray diffraction and transmission electron microscopy",

abstract = "A grazing incidence x-ray diffraction with a synchrotron radiation and a cross-sectional high-resolution transmission electron microscopy were performed on the sapphire surface nitrided at 1080 °C for 30 min. The thickness of the nitrided layer was about 2 nm. It was found out that the wurtzite, zinc-blende, and 30° rotated zinc-blende aluminum nitrides were formed on the sapphire surface. The 30° rotated zb-AlN formed the incoherent interface and has higher activation energy of formation, while the nonrotated zb-AlN formed the coherent interface.",

author = "Lee, {Hyo Jong} and Ha, {Jun Seok} and Lee, {S. W.} and Lee, {H. J.} and H. Goto and Lee, {S. H.} and Cho, {M. W.} and T. Yao and T. Minegishi and T. Hanada and Hong, {Soon Ku} and Osami Sakata and Lee, {Jae Wook} and Lee, {Jeong Yong}",

year = "2007",

doi = "10.1063/1.2815919",

language = "English",

volume = "91",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - Structural investigation of nitrided c -sapphire substrate by grazing incidence x-ray diffraction and transmission electron microscopy

AU - Lee, Hyo Jong

AU - Ha, Jun Seok

AU - Lee, S. W.

AU - Lee, H. J.

AU - Goto, H.

AU - Lee, S. H.

AU - Cho, M. W.

AU - Yao, T.

AU - Minegishi, T.

AU - Hanada, T.

AU - Hong, Soon Ku

AU - Sakata, Osami

AU - Lee, Jae Wook

AU - Lee, Jeong Yong

PY - 2007

Y1 - 2007

N2 - A grazing incidence x-ray diffraction with a synchrotron radiation and a cross-sectional high-resolution transmission electron microscopy were performed on the sapphire surface nitrided at 1080 °C for 30 min. The thickness of the nitrided layer was about 2 nm. It was found out that the wurtzite, zinc-blende, and 30° rotated zinc-blende aluminum nitrides were formed on the sapphire surface. The 30° rotated zb-AlN formed the incoherent interface and has higher activation energy of formation, while the nonrotated zb-AlN formed the coherent interface.

AB - A grazing incidence x-ray diffraction with a synchrotron radiation and a cross-sectional high-resolution transmission electron microscopy were performed on the sapphire surface nitrided at 1080 °C for 30 min. The thickness of the nitrided layer was about 2 nm. It was found out that the wurtzite, zinc-blende, and 30° rotated zinc-blende aluminum nitrides were formed on the sapphire surface. The 30° rotated zb-AlN formed the incoherent interface and has higher activation energy of formation, while the nonrotated zb-AlN formed the coherent interface.

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JF - Applied Physics Letters

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Structural investigation of nitrided c -sapphire substrate by grazing incidence x-ray diffraction and transmission electron microscopy

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