TY - GEN
T1 - Structural investigation of organosilane self-assembled monolayers by atomic scale simulation
AU - Yamamoto, H.
AU - Watanabe, T.
AU - Nishiyama, K.
AU - Tatsumura, K.
AU - Ohdomari, I.
PY - 2006/3
Y1 - 2006/3
N2 - Molecular mechanics (MM) and molecular dynamics (MD) simulations have been performed to investigate the two-dimensional structure of organosilane self-assembled monolayers (SAMs). Unlike alkanethiol SAMs, the arrangement of molecules in organosilane SAMs is not crystalline, and their molecular structure yet remains undetermined. AMBER 8 is employed with our newly developed Si parameters for the MM/MD simulations. Simulations performed for structures with different bonding networks in the polysiloxane layer shows that the ratio of hydrogen bonds has a profound effect on conformations and strain energies of optimized structures. Our results suggest that alkylsilane SAMs formed on substrates are not perfectly uniform but may have some defects.
AB - Molecular mechanics (MM) and molecular dynamics (MD) simulations have been performed to investigate the two-dimensional structure of organosilane self-assembled monolayers (SAMs). Unlike alkanethiol SAMs, the arrangement of molecules in organosilane SAMs is not crystalline, and their molecular structure yet remains undetermined. AMBER 8 is employed with our newly developed Si parameters for the MM/MD simulations. Simulations performed for structures with different bonding networks in the polysiloxane layer shows that the ratio of hydrogen bonds has a profound effect on conformations and strain energies of optimized structures. Our results suggest that alkylsilane SAMs formed on substrates are not perfectly uniform but may have some defects.
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U2 - 10.1051/jp4:2006132036
DO - 10.1051/jp4:2006132036
M3 - Conference contribution
AN - SCOPUS:33744912482
SN - 2868839185
SN - 9782868839183
T3 - Journal De Physique. IV : JP
SP - 189
EP - 193
BT - Proceedings - ICFSI-10 - 10th International Conference on the Formation of Semiconductor Interfaces
T2 - ICFSI-10 - 10th International Conference on the Formation of Semiconductor Interfaces
Y2 - 3 July 2005 through 8 July 2005
ER -