Polycrystalline BiFe O3 film has been fabricated by a chemical solution deposition on PtTiSi O2 Si (100) substrates. A ferroelectric hysteresis loop showed a high remanent polarization of 47 μC cm2 at room temperature. Leakage current density was on the order of 10-1 A cm2 at 100 kVcm, indicating the high leakage current density in the present BiFe O3 film. The leakage current mechanism could be considered as follows: Ohmic conduction at low electric field and Poole-Frenkel trap-assisted conduction appeared as the electric field increased, and space-charge-limited current started at a high electric field. Weak ferromagnetism was observed at room temperature, and magnetic coercivity increased to 0.5 kOe with small remanent magnetization of 2 emu cm3 at 10 K. In order to investigate the magnetoelectric effect of the BiFe O3 film, the ferroelectric hysteresis loop was measured under the magnetic field of 5 kG at room temperature.