TY - JOUR
T1 - Structural, magnetic, and magnetotransport properties of FePt/MgO/CoPt perpendicularly magnetized tunnel junctions
AU - Inami, N.
AU - Kim, G.
AU - Hiratsuka, T.
AU - Naganuma, H.
AU - Oogane, M.
AU - Ando, Y.
PY - 2010/1/1
Y1 - 2010/1/1
N2 - Perpendicularly magnetized magnetic tunnel junctions (MTJs) were fabricated by depositing thin L10-ordered FePt films on MgO(001) substrates using a UHV sputtering system, and the dependence of structural, magnetic, magnetotransport properties of the junctions on the thickness of the FePt layers was investigated. A full epitaxial structure was observed when the thickness of the L10-ordered FePt film was 4 nm. The tunnel magnetoresistance (TMR) ratio was measured to be 6% at room temperature, and magnetization switching was clearly observed in the thin FePt layer.
AB - Perpendicularly magnetized magnetic tunnel junctions (MTJs) were fabricated by depositing thin L10-ordered FePt films on MgO(001) substrates using a UHV sputtering system, and the dependence of structural, magnetic, magnetotransport properties of the junctions on the thickness of the FePt layers was investigated. A full epitaxial structure was observed when the thickness of the L10-ordered FePt film was 4 nm. The tunnel magnetoresistance (TMR) ratio was measured to be 6% at room temperature, and magnetization switching was clearly observed in the thin FePt layer.
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U2 - 10.1088/1742-6596/200/5/052008
DO - 10.1088/1742-6596/200/5/052008
M3 - Conference article
AN - SCOPUS:77957036549
SN - 1742-6588
VL - 200
JO - Journal of Physics: Conference Series
JF - Journal of Physics: Conference Series
IS - SECTION 5
M1 - 052008
ER -