Abstract
A wide-terrace single-domain Si(001)2×1 surface has been used to prepare a single-domain Si(001)2×1-Cs surface and a negative electron affinity (NEA) surface of single-domain O/Cs/Si(001)2×1. An X-ray photoelectron diffraction study has reinforced the reliability of a Cs double-layer model for the Si(001)2×1-Cs surface. X-ray photoelectron diffraction for the NEA surface has revealed that the Cs double-layer is preserved and adsorption of oxygen takes place in a hollow site on a level that is coplanar with the lower Cs layer.
| Original language | English |
|---|---|
| Pages (from-to) | L303-L305 |
| Journal | Japanese journal of applied physics |
| Volume | 28 |
| Issue number | 2 A |
| DOIs | |
| Publication status | Published - 1989 Feb |
Keywords
- Cs adsorption
- Interface
- Negative electron affinity
- Oxygen adsorption
- Photoelectron spectroscopy
- Si(001)
- Single domain
- Solid surface
- X-ray photoelectron diffraction
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)