Structural-order dependence of anomalous Hall effect in Co2MnGa topological semimetal thin films

Qiang Wang; Zhenchao Wen; Takahide Kubota; Takeshi Seki; Koki Takanashi

doi:10.1063/1.5127553

Structural-order dependence of anomalous Hall effect in Co₂MnGa topological semimetal thin films

Qiang Wang, Zhenchao Wen, Takahide Kubota, Takeshi Seki, Koki Takanashi

IMR - Materials Development Division

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21 Citations (Scopus)

Abstract

We report on the large anomalous Hall effect (AHE) and its structural-order dependence for epitaxial Co₂MnGa topological semimetal films fabricated by a sputtering method. The structural orders of the films were systematically changed from B2 to L2₁ upon tuning the film growth temperature. It was found that the AHE was dramatically enhanced when the Co₂MnGa films contained the L2₁-ordered phase. A large anomalous Hall angle of ∼12.6% at 10 K (∼11% at 300 K) was achieved at maximum. The dependence of anomalous Hall conductivity on longitudinal conductivity suggests that the intrinsic contribution plays a major role in the AHE. Thus, the enhanced AHE with the L2₁ order is attributed to the improvement of topological electronic structures in the L2₁-ordered Co₂MnGa films. This scenario also allows us to explain the structural-order dependence of magnetoresistance.

Original language	English
Article number	252401
Journal	Applied Physics Letters
Volume	115
Issue number	25
DOIs	https://doi.org/10.1063/1.5127553
Publication status	Published - 2019 Dec 16

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title = "Structural-order dependence of anomalous Hall effect in Co2MnGa topological semimetal thin films",

abstract = "We report on the large anomalous Hall effect (AHE) and its structural-order dependence for epitaxial Co2MnGa topological semimetal films fabricated by a sputtering method. The structural orders of the films were systematically changed from B2 to L21 upon tuning the film growth temperature. It was found that the AHE was dramatically enhanced when the Co2MnGa films contained the L21-ordered phase. A large anomalous Hall angle of ∼12.6% at 10 K (∼11% at 300 K) was achieved at maximum. The dependence of anomalous Hall conductivity on longitudinal conductivity suggests that the intrinsic contribution plays a major role in the AHE. Thus, the enhanced AHE with the L21 order is attributed to the improvement of topological electronic structures in the L21-ordered Co2MnGa films. This scenario also allows us to explain the structural-order dependence of magnetoresistance.",

author = "Qiang Wang and Zhenchao Wen and Takahide Kubota and Takeshi Seki and Koki Takanashi",

note = "Funding Information: We thank Y. Sakuraba for fruitful discussion. This work was partially supported by the KAKENHI (S) (No. 18H05246), Grant-in-Aid for Challenging Research (Exploratory, No. 18K19012), and Grant-in-Aid for Young Scientists (No. 17K14652) from the Japan Society for the Promotion of Science (JSPS) and the InterUniversity Cooperative Research Program of the Institute for Materials Research, Tohoku University (No. 19K0042). Funding Information: We thank Y. Sakuraba for fruitful discussion. This work was partially supported by the KAKENHI (S) (No. 18H05246), Grant-in-Aid for Challenging Research (Exploratory, No. 18K19012), and Grant-in-Aid for Young Scientists (No. 17K14652) from the Japan Society for the Promotion of Science (JSPS) and the Inter-University Cooperative Research Program of the Institute for Materials Research, Tohoku University (No. 19K0042). Publisher Copyright: {\textcopyright} 2019 Author(s).",

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AU - Wang, Qiang

AU - Wen, Zhenchao

AU - Kubota, Takahide

AU - Seki, Takeshi

AU - Takanashi, Koki

N1 - Funding Information: We thank Y. Sakuraba for fruitful discussion. This work was partially supported by the KAKENHI (S) (No. 18H05246), Grant-in-Aid for Challenging Research (Exploratory, No. 18K19012), and Grant-in-Aid for Young Scientists (No. 17K14652) from the Japan Society for the Promotion of Science (JSPS) and the InterUniversity Cooperative Research Program of the Institute for Materials Research, Tohoku University (No. 19K0042). Funding Information: We thank Y. Sakuraba for fruitful discussion. This work was partially supported by the KAKENHI (S) (No. 18H05246), Grant-in-Aid for Challenging Research (Exploratory, No. 18K19012), and Grant-in-Aid for Young Scientists (No. 17K14652) from the Japan Society for the Promotion of Science (JSPS) and the Inter-University Cooperative Research Program of the Institute for Materials Research, Tohoku University (No. 19K0042). Publisher Copyright: © 2019 Author(s).

PY - 2019/12/16

Y1 - 2019/12/16

N2 - We report on the large anomalous Hall effect (AHE) and its structural-order dependence for epitaxial Co2MnGa topological semimetal films fabricated by a sputtering method. The structural orders of the films were systematically changed from B2 to L21 upon tuning the film growth temperature. It was found that the AHE was dramatically enhanced when the Co2MnGa films contained the L21-ordered phase. A large anomalous Hall angle of ∼12.6% at 10 K (∼11% at 300 K) was achieved at maximum. The dependence of anomalous Hall conductivity on longitudinal conductivity suggests that the intrinsic contribution plays a major role in the AHE. Thus, the enhanced AHE with the L21 order is attributed to the improvement of topological electronic structures in the L21-ordered Co2MnGa films. This scenario also allows us to explain the structural-order dependence of magnetoresistance.

AB - We report on the large anomalous Hall effect (AHE) and its structural-order dependence for epitaxial Co2MnGa topological semimetal films fabricated by a sputtering method. The structural orders of the films were systematically changed from B2 to L21 upon tuning the film growth temperature. It was found that the AHE was dramatically enhanced when the Co2MnGa films contained the L21-ordered phase. A large anomalous Hall angle of ∼12.6% at 10 K (∼11% at 300 K) was achieved at maximum. The dependence of anomalous Hall conductivity on longitudinal conductivity suggests that the intrinsic contribution plays a major role in the AHE. Thus, the enhanced AHE with the L21 order is attributed to the improvement of topological electronic structures in the L21-ordered Co2MnGa films. This scenario also allows us to explain the structural-order dependence of magnetoresistance.

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Structural-order dependence of anomalous Hall effect in Co₂MnGa topological semimetal thin films

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