Structure and composition investigation of RPECVD SiCN and LPCVD BCN films

M. L. Kosinova, N. I. Fainer, Yu M. Rumyantsev, M. Terauchi, K. Shibata, F. Satoh, M. Tanaka, F. A. Kuznetsov

Research output: Contribution to journalConference articlepeer-review

4 Citations (Scopus)


The silicon carbonitride films have been synthesised by RPECVD using a mixture of ammonia, helium and hexamethyldisilazane Si2NH(CH3)6 as a volatile single-source precursor. The boron carbonitride thin films have been grown by LPCVD using triethylamine borane complex N(C2H5)3·BH3 both with and without ammonia. Different techniques such as IR and Raman spectroscopy, ellipsometry, XPS, EDS, SEM, HREM, SAED and XRD using synchrotron radiation were used to study physical and chemical properties and structure. These films consist nanocrystals with size of 2-9 nm distributed in amorphous matrix. Analysis of IR spectroscopy and XPS data of the SiCN films showed that silicon atoms form chemical bonds with nitrogen and carbon atoms.

Original languageEnglish
Pages (from-to)Pr3987-Pr3994
JournalJournal De Physique. IV : JP
Issue number3
Publication statusPublished - 2001
Event13th European Conference on Chemical Vapor Deposition (EUROCVD 13) - Athens, Greece
Duration: 2001 Aug 262001 Aug 31


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