Structure and composition of the ZnSe(001) surface during atomic-layer epitaxy

Akihiro Ohtake, Takashi Hanada, Tetsuji Yasuda, Kenta Arai, Takafumi Yao

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43 Citations (Scopus)


Atomic-layer epitaxy (ALE) processes of ZnSe on GaAs(001) have been studied using reflection high-energy electron diffraction (RHEED), total reflection-angle x-ray spectroscopy, and x-ray photoelectron spectroscopy. We have obtained direct evidence that the growing surface of ZnSe(001) changes its chemical composition during ALE growth, which corresponds to the alternate formation of the Se-stabilized (2×1) and Zn-stabilized c(2×2) reconstructions. The rocking-curve analysis of RHEED have been used in structure analysis for these reconstructed surfaces: the (2×1) surface has the Se-dimer structure, in agreement with previous studies. On the other hand, we have found that the c(2×2) surface has the Se-vacancy structure, contrary to the previously proposed Zn-vacancy structure. The growth rate of ZnSe has been estimated to be about 0.5 bilayer per ALE cycle, which is consistent with the formation of these surface structures.

Original languageEnglish
Pages (from-to)8326-8332
Number of pages7
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number11
Publication statusPublished - 1999


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