Structure and Electronic States of the α-Sn(111)-(2 × 2) Surface

Toyoaki Eguchi; Jun Nakamura; Toshiaki Osaka

doi:10.1143/JPSJ.67.381

Structure and Electronic States of the α-Sn(111)-(2 × 2) Surface

Toyoaki Eguchi, Jun Nakamura, Toshiaki Osaka

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

Scanning tunneling microscopy (STM) has been used to study the surface structure and the electrtonic states of α-Sn(111) films grown heteroepitaxially on InSb(111)A-2 × 2). The wide ares STM image shown a large number of domains existing on the terrce, each having an average size of about 100 Å and a period of (2 × 2). The magnifide image shows evidence of a T₄-adatom and rest-atom pair reconstructed structure for the α-Sn(111)-(2 × 2) surface, as expected from the ab initio calculations. Furthermore, the result that the adatom and the rest-atom appear simultaneously in the occupied state image can be explained by the existence of back bond states in the adatom configuration.

Original language	English
Pages (from-to)	381-384
Number of pages	4
Journal	journal of the physical society of japan
Volume	67
Issue number	2
DOIs	https://doi.org/10.1143/JPSJ.67.381
Publication status	Published - 1998 Jan 1
Externally published	Yes

Keywords

Semiconductor
Stm, α-sn
Surface electronic states
Surface reconstruction
Surface structure

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1143/JPSJ.67.381

Cite this

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title = "Structure and Electronic States of the α-Sn(111)-(2 × 2) Surface",

abstract = "Scanning tunneling microscopy (STM) has been used to study the surface structure and the electrtonic states of α-Sn(111) films grown heteroepitaxially on InSb(111)A-2 × 2). The wide ares STM image shown a large number of domains existing on the terrce, each having an average size of about 100 {\AA} and a period of (2 × 2). The magnifide image shows evidence of a T4-adatom and rest-atom pair reconstructed structure for the α-Sn(111)-(2 × 2) surface, as expected from the ab initio calculations. Furthermore, the result that the adatom and the rest-atom appear simultaneously in the occupied state image can be explained by the existence of back bond states in the adatom configuration.",

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AU - Eguchi, Toyoaki

AU - Nakamura, Jun

AU - Osaka, Toshiaki

PY - 1998/1/1

Y1 - 1998/1/1

N2 - Scanning tunneling microscopy (STM) has been used to study the surface structure and the electrtonic states of α-Sn(111) films grown heteroepitaxially on InSb(111)A-2 × 2). The wide ares STM image shown a large number of domains existing on the terrce, each having an average size of about 100 Å and a period of (2 × 2). The magnifide image shows evidence of a T4-adatom and rest-atom pair reconstructed structure for the α-Sn(111)-(2 × 2) surface, as expected from the ab initio calculations. Furthermore, the result that the adatom and the rest-atom appear simultaneously in the occupied state image can be explained by the existence of back bond states in the adatom configuration.

AB - Scanning tunneling microscopy (STM) has been used to study the surface structure and the electrtonic states of α-Sn(111) films grown heteroepitaxially on InSb(111)A-2 × 2). The wide ares STM image shown a large number of domains existing on the terrce, each having an average size of about 100 Å and a period of (2 × 2). The magnifide image shows evidence of a T4-adatom and rest-atom pair reconstructed structure for the α-Sn(111)-(2 × 2) surface, as expected from the ab initio calculations. Furthermore, the result that the adatom and the rest-atom appear simultaneously in the occupied state image can be explained by the existence of back bond states in the adatom configuration.

KW - Semiconductor

KW - Stm, α-sn

KW - Surface electronic states

KW - Surface reconstruction

KW - Surface structure

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Structure and Electronic States of the α-Sn(111)-(2 × 2) Surface

Abstract

Keywords

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