Pb(Zr,Ti)O3 (PZT) piezoelectric ceramics with higher Curie temperature Tc are necessary for a fabrication of better micro actuators, sensors, memories and/or piezoelectric micro electromechanical systems(MEMS). New piezoelectric materials with higher Tcbeyond PZT are extensively studied. Among the new piezoelectric materials, Bi(Me)O3-xPbTiO3 ceramics(Me: Yb, In, Sc) are fascinated for the higher Tc materials. In this paper thin films of single crystal (1-x)BiScO3-xPbTiO3 (BS-xPT) were deposited by an rf-magnetron sputtering for a better understanding of ferroelectric performance of the BS-xPT. We have made a laminated composite structure comprising relaxed hetero-epitaxial single crystal thin films of high TcBS-xPT (0.5≤x≤0.8) and SrRuO3(SRO)/Pt/MgO hetero-structural substrates. It was confirmed their ferroelectric performances of the BS-xPT thin films were comparable to the PZT based thin films: a thin film transverse piezoelectricity e31,f was -6.7C/m2 at x=0.8 with 2Pr=∼60μC/cm2, 2Ec=∼250 kV/cm, and ε/εo=∼150. The BS-0.8PT thin films exhibit extraordinary high Tc with Tc=750°C. The enhanced Tc is caused by the presence of the high temperature stable interface in the laminated composite structure. The present BS-xPT thin films have a high potential for a fabrication of high temperature stable piezoelectric MEMS beyond PZT.