Structure and magnetic properties of Cr-doped GaN

J. J. Kim; H. Makino; M. Sakurai; D. C. Oh; T. Hanada; M. W. Cho; T. Yao; S. Emura; K. Kobayashi

doi:10.1116/1.1924468

Structure and magnetic properties of Cr-doped GaN

J. J. Kim, H. Makino, M. Sakurai, D. C. Oh, T. Hanada, M. W. Cho, T. Yao, S. Emura, K. Kobayashi

IMR - Materials Design Division

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

Structure and magnetic properties of the Ga1-x Crx N (x=0.013, 0.063, and 0.101) have been investigated. The lattice constant of the c axis is systematically decreased with increasing Cr content. The local structure around a Cr atom maintains tetrahedral symmetry up to x=0.101 the same as the local symmetry of GaN by x-ray absorption fine structure analysis. The analysis on x=0.013 indicated that the second nearest neighbor around the absorbing Cr atoms consists of only 12 Ga atoms. However, for x=0.063, the second nearest neighbor around the absorber consists of Ga and Cr atoms with an unexpectedly high ratio of about Ga:Cr=2:1. In Cr K -edge x-ray absorption near edge structure, we observed the oxidation state of Cr ion increases with increasing Cr content. Ferromagnetic behavior was observed in all Ga1-x Crx N films. However, the paramagnetic component also coexists with the ferromagnetic component. Total effective magnetic moment per Cr atom decreased from 3.17 μB atom for x=0.013 to 1.05 and 0.79 μB atom for x=0.063 and 0.101, respectively. The decreased magnetic moments of the x=0.063 and 0.101 is possibly caused by antiferromagnetic interaction of Cr-N-Cr networks in the high Cr content samples.

Original language	English
Pages (from-to)	1308-1312
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	23
Issue number	3
DOIs	https://doi.org/10.1116/1.1924468
Publication status	Published - 2005

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@article{771aa12409eb43d8bd6183bc5e59491f,

title = "Structure and magnetic properties of Cr-doped GaN",

abstract = "Structure and magnetic properties of the Ga1-x Crx N (x=0.013, 0.063, and 0.101) have been investigated. The lattice constant of the c axis is systematically decreased with increasing Cr content. The local structure around a Cr atom maintains tetrahedral symmetry up to x=0.101 the same as the local symmetry of GaN by x-ray absorption fine structure analysis. The analysis on x=0.013 indicated that the second nearest neighbor around the absorbing Cr atoms consists of only 12 Ga atoms. However, for x=0.063, the second nearest neighbor around the absorber consists of Ga and Cr atoms with an unexpectedly high ratio of about Ga:Cr=2:1. In Cr K -edge x-ray absorption near edge structure, we observed the oxidation state of Cr ion increases with increasing Cr content. Ferromagnetic behavior was observed in all Ga1-x Crx N films. However, the paramagnetic component also coexists with the ferromagnetic component. Total effective magnetic moment per Cr atom decreased from 3.17 μB atom for x=0.013 to 1.05 and 0.79 μB atom for x=0.063 and 0.101, respectively. The decreased magnetic moments of the x=0.063 and 0.101 is possibly caused by antiferromagnetic interaction of Cr-N-Cr networks in the high Cr content samples.",

author = "Kim, {J. J.} and H. Makino and M. Sakurai and Oh, {D. C.} and T. Hanada and Cho, {M. W.} and T. Yao and S. Emura and K. Kobayashi",

note = "Funding Information: XAFS studies were performed as a part of a project (Project No. 2003P009) accepted by the Photon Factory Program Advisory Committee. J.J.K. would like to thank International Communications Foundation (ICF) for its financial support, “Fellowship for Researchers and Graduate Students from abroad.” This work has been partially supported by the “Collaborative Research” at the Center for Interdisciplinary Research, Tohoku University.",

year = "2005",

doi = "10.1116/1.1924468",

language = "English",

volume = "23",

pages = "1308--1312",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

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TY - JOUR

T1 - Structure and magnetic properties of Cr-doped GaN

AU - Kim, J. J.

AU - Makino, H.

AU - Sakurai, M.

AU - Oh, D. C.

AU - Hanada, T.

AU - Cho, M. W.

AU - Yao, T.

AU - Emura, S.

AU - Kobayashi, K.

N1 - Funding Information: XAFS studies were performed as a part of a project (Project No. 2003P009) accepted by the Photon Factory Program Advisory Committee. J.J.K. would like to thank International Communications Foundation (ICF) for its financial support, “Fellowship for Researchers and Graduate Students from abroad.” This work has been partially supported by the “Collaborative Research” at the Center for Interdisciplinary Research, Tohoku University.

PY - 2005

Y1 - 2005

N2 - Structure and magnetic properties of the Ga1-x Crx N (x=0.013, 0.063, and 0.101) have been investigated. The lattice constant of the c axis is systematically decreased with increasing Cr content. The local structure around a Cr atom maintains tetrahedral symmetry up to x=0.101 the same as the local symmetry of GaN by x-ray absorption fine structure analysis. The analysis on x=0.013 indicated that the second nearest neighbor around the absorbing Cr atoms consists of only 12 Ga atoms. However, for x=0.063, the second nearest neighbor around the absorber consists of Ga and Cr atoms with an unexpectedly high ratio of about Ga:Cr=2:1. In Cr K -edge x-ray absorption near edge structure, we observed the oxidation state of Cr ion increases with increasing Cr content. Ferromagnetic behavior was observed in all Ga1-x Crx N films. However, the paramagnetic component also coexists with the ferromagnetic component. Total effective magnetic moment per Cr atom decreased from 3.17 μB atom for x=0.013 to 1.05 and 0.79 μB atom for x=0.063 and 0.101, respectively. The decreased magnetic moments of the x=0.063 and 0.101 is possibly caused by antiferromagnetic interaction of Cr-N-Cr networks in the high Cr content samples.

AB - Structure and magnetic properties of the Ga1-x Crx N (x=0.013, 0.063, and 0.101) have been investigated. The lattice constant of the c axis is systematically decreased with increasing Cr content. The local structure around a Cr atom maintains tetrahedral symmetry up to x=0.101 the same as the local symmetry of GaN by x-ray absorption fine structure analysis. The analysis on x=0.013 indicated that the second nearest neighbor around the absorbing Cr atoms consists of only 12 Ga atoms. However, for x=0.063, the second nearest neighbor around the absorber consists of Ga and Cr atoms with an unexpectedly high ratio of about Ga:Cr=2:1. In Cr K -edge x-ray absorption near edge structure, we observed the oxidation state of Cr ion increases with increasing Cr content. Ferromagnetic behavior was observed in all Ga1-x Crx N films. However, the paramagnetic component also coexists with the ferromagnetic component. Total effective magnetic moment per Cr atom decreased from 3.17 μB atom for x=0.013 to 1.05 and 0.79 μB atom for x=0.063 and 0.101, respectively. The decreased magnetic moments of the x=0.063 and 0.101 is possibly caused by antiferromagnetic interaction of Cr-N-Cr networks in the high Cr content samples.

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JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

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ER -

Structure and magnetic properties of Cr-doped GaN

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