Structure and optical properties of Si and SiGe layers grown on SiO2 by chemical vapor deposition

A. A. Shklyaev; V. I. Vdovin; V. A. Volodin; D. V. Gulyaev; A. S. Kozhukhov; M. Sakuraba; J. Murota

doi:10.1016/j.tsf.2015.02.076

Structure and optical properties of Si and SiGe layers grown on SiO₂ by chemical vapor deposition

A. A. Shklyaev, V. I. Vdovin, V. A. Volodin, D. V. Gulyaev, A. S. Kozhukhov, M. Sakuraba, J. Murota

RIEC - Computing System Platforms Division

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Abstract

Abstract The properties of thin Si and SiGe layers grown on SiO₂ by chemical vapor deposition (CVD) were studied using transmission electron and atomic force microscopies, and Raman and photoluminescence (PL) spectroscopies. The layers with a composition of Si_0.5Ge_0.5 become composed of nanocrystals with an average size of about 100 nm at growth temperatures of 550 C which is significantly lower than that for the pure Si layers. Moreover, the Si_0.5Ge_0.5 layers exhibit a broad PL peak centered at 0.8 eV, whereas the bandgap of unstrained Si_0.5Ge_0.5 is about 1 eV. This indicates that PL occurs through deep energy levels in the bandgap, which can be associated with crystal defects. The predominance of deep-level PL in radiative emission can be the result of a high concentration of defects that appear due to a low growth temperature.

Original language	English
Article number	34156
Pages (from-to)	131-135
Number of pages	5
Journal	Thin Solid Films
Volume	579
DOIs	https://doi.org/10.1016/j.tsf.2015.02.076
Publication status	Published - 2015 Mar 31

Keywords

Chemical vapor deposition
Photoluminescence
Polycrystalline structure
Silicon
Silicon dioxide
Silicon germanium
Surface morphology

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10.1016/j.tsf.2015.02.076

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title = "Structure and optical properties of Si and SiGe layers grown on SiO2 by chemical vapor deposition",

abstract = "Abstract The properties of thin Si and SiGe layers grown on SiO2 by chemical vapor deposition (CVD) were studied using transmission electron and atomic force microscopies, and Raman and photoluminescence (PL) spectroscopies. The layers with a composition of Si0.5Ge0.5 become composed of nanocrystals with an average size of about 100 nm at growth temperatures of 550 C which is significantly lower than that for the pure Si layers. Moreover, the Si0.5Ge0.5 layers exhibit a broad PL peak centered at 0.8 eV, whereas the bandgap of unstrained Si0.5Ge0.5 is about 1 eV. This indicates that PL occurs through deep energy levels in the bandgap, which can be associated with crystal defects. The predominance of deep-level PL in radiative emission can be the result of a high concentration of defects that appear due to a low growth temperature.",

keywords = "Chemical vapor deposition, Photoluminescence, Polycrystalline structure, Silicon, Silicon dioxide, Silicon germanium, Surface morphology",

author = "Shklyaev, {A. A.} and Vdovin, {V. I.} and Volodin, {V. A.} and Gulyaev, {D. V.} and Kozhukhov, {A. S.} and M. Sakuraba and J. Murota",

note = "Funding Information: The financial support by the Russian Science Foundution (grant 14-12-01037 ) is gratefully acknowledged. Publisher Copyright: {\textcopyright} 2015 Elsevier B.V. All rights reserved.",

year = "2015",

month = mar,

day = "31",

doi = "10.1016/j.tsf.2015.02.076",

language = "English",

volume = "579",

pages = "131--135",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

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TY - JOUR

T1 - Structure and optical properties of Si and SiGe layers grown on SiO2 by chemical vapor deposition

AU - Shklyaev, A. A.

AU - Vdovin, V. I.

AU - Volodin, V. A.

AU - Gulyaev, D. V.

AU - Kozhukhov, A. S.

AU - Sakuraba, M.

AU - Murota, J.

PY - 2015/3/31

Y1 - 2015/3/31

N2 - Abstract The properties of thin Si and SiGe layers grown on SiO2 by chemical vapor deposition (CVD) were studied using transmission electron and atomic force microscopies, and Raman and photoluminescence (PL) spectroscopies. The layers with a composition of Si0.5Ge0.5 become composed of nanocrystals with an average size of about 100 nm at growth temperatures of 550 C which is significantly lower than that for the pure Si layers. Moreover, the Si0.5Ge0.5 layers exhibit a broad PL peak centered at 0.8 eV, whereas the bandgap of unstrained Si0.5Ge0.5 is about 1 eV. This indicates that PL occurs through deep energy levels in the bandgap, which can be associated with crystal defects. The predominance of deep-level PL in radiative emission can be the result of a high concentration of defects that appear due to a low growth temperature.

AB - Abstract The properties of thin Si and SiGe layers grown on SiO2 by chemical vapor deposition (CVD) were studied using transmission electron and atomic force microscopies, and Raman and photoluminescence (PL) spectroscopies. The layers with a composition of Si0.5Ge0.5 become composed of nanocrystals with an average size of about 100 nm at growth temperatures of 550 C which is significantly lower than that for the pure Si layers. Moreover, the Si0.5Ge0.5 layers exhibit a broad PL peak centered at 0.8 eV, whereas the bandgap of unstrained Si0.5Ge0.5 is about 1 eV. This indicates that PL occurs through deep energy levels in the bandgap, which can be associated with crystal defects. The predominance of deep-level PL in radiative emission can be the result of a high concentration of defects that appear due to a low growth temperature.

KW - Chemical vapor deposition

KW - Photoluminescence

KW - Polycrystalline structure

KW - Silicon

KW - Silicon dioxide

KW - Silicon germanium

KW - Surface morphology

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DO - 10.1016/j.tsf.2015.02.076

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SN - 0040-6090

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EP - 135

JO - Thin Solid Films

JF - Thin Solid Films

M1 - 34156

ER -

Structure and optical properties of Si and SiGe layers grown on SiO₂ by chemical vapor deposition

Abstract

Keywords

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